DS1245W-100IND

Product Overview

Category

The DS1245W-100IND belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The DS1245W-100IND retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: The device provides quick access to stored data.
• Low power consumption: It operates with low power requirements.
• Reliable: The DS1245W-100IND ensures data integrity and durability.

Package

The DS1245W-100IND comes in a standard integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The DS1245W-100IND is typically packaged individually and is available in various quantities.

Specifications

• Storage Capacity: 1 Megabit (128 Kilobytes)
• Access Time: <100 ns
• Operating Voltage: 3.0V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: >10 years
• Package Type: DIP (Dual In-line Package)

Detailed Pin Configuration

The DS1245W-100IND has a standard pin configuration as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip Enable
4. OE - Output Enable
5. WE - Write Enable
6. A0-A16 - Address Inputs
7. DQ0-DQ7 - Data Input/Output
8. RST - Reset

Functional Features

• Random access: Allows reading and writing of data at any location within the memory.
• Byte-wide operation: Supports individual byte read and write operations.
• Hardware data protection: Provides write protection for specific memory areas.
• Software data protection: Allows software-controlled write protection for additional security.
• High-speed performance: Offers fast access times for efficient data retrieval.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing a significant amount of data.
• Fast access time enables quick retrieval of information.
• Low power consumption reduces energy requirements.
• Reliable operation ensures data integrity and durability.

Disadvantages

• Limited storage capacity compared to other modern memory devices.
• Relatively slower access times compared to some newer memory technologies.

Working Principles

The DS1245W-100IND utilizes a combination of CMOS and EEPROM technologies. It stores data in non-volatile memory cells, which retain their state even when power is removed. The device uses address inputs to locate specific memory locations and allows reading or writing data through data input/output pins. The chip enable, output enable, and write enable signals control the memory operations.

Detailed Application Field Plans

The DS1245W-100IND finds applications in various electronic systems, including but not limited to: - Embedded systems - Industrial automation - Automotive electronics - Medical devices - Communication equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the DS1245W-100IND include: - DS1245AB-120 - DS1245Y-70 - DS1245Y-120 - DS1245Y-200

These models provide comparable features and specifications, allowing users to choose based on their specific requirements.

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