24AA64FT-I/MNY

Product Overview

Category

The 24AA64FT-I/MNY belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: Retains stored data even when power is removed.
• Electrically erasable: Allows for easy modification of stored data.
• Programmable: Can be written and rewritten multiple times.
• High storage capacity: The 24AA64FT-I/MNY has a storage capacity of 64 kilobits (8 kilobytes).

Package

The 24AA64FT-I/MNY is available in a small surface-mount package, making it suitable for compact electronic devices.

Essence

The essence of this product lies in its ability to provide reliable and flexible non-volatile data storage in electronic systems.

Packaging/Quantity

The 24AA64FT-I/MNY is typically packaged in reels or tubes, with quantities varying depending on customer requirements.

Specifications

• Memory capacity: 64 kilobits (8 kilobytes)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Interface: I2C (Inter-Integrated Circuit)
• Write endurance: 1 million write cycles
• Data retention: Up to 200 years

Detailed Pin Configuration

The 24AA64FT-I/MNY has a standard 8-pin configuration:

1. VCC: Power supply voltage
2. SDA: Serial data input/output for I2C communication
3. SCL: Serial clock input for I2C communication
4. WP: Write protect pin for hardware protection
5. A0: Address bit 0 for device addressing
6. A1: Address bit 1 for device addressing
7. A2: Address bit 2 for device addressing
8. GND: Ground reference

Functional Features

• I2C interface: The 24AA64FT-I/MNY supports the widely used I2C communication protocol, allowing for easy integration into existing systems.
• Hardware write protection: The WP pin can be used to protect the stored data from accidental modification.
• Sequential read operation: Enables efficient retrieval of consecutive memory locations.
• Software write protection: Additional software-based protection mechanisms can be implemented to enhance data security.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Ensures data integrity even during power loss.
• High endurance: Can withstand frequent write operations without degradation.
• Compact package: Suitable for space-constrained applications.
• Wide operating voltage range: Compatible with various power supply configurations.

Disadvantages

• Limited storage capacity: May not be suitable for applications requiring large amounts of data storage.
• Relatively slower write speed compared to other memory technologies.
• Vulnerable to electromagnetic interference (EMI) due to its small size.

Working Principles

The 24AA64FT-I/MNY utilizes EEPROM technology, which allows for electrically erasing and reprogramming of data. It consists of a grid of memory cells that can be individually addressed and written to or read from using the I2C interface. When data is written, an electrical charge is applied to the memory cell, altering its state. This altered state can be detected when reading the data.

Detailed Application Field Plans

The 24AA64FT-I/MNY finds application in various fields, including:

1. Automotive electronics: Used for storing vehicle configuration data, firmware updates, and diagnostic information.
2. Industrial automation: Enables storage of calibration data, device parameters, and configuration settings.
3. Consumer electronics: Utilized in smart devices, wearables, and home appliances for data storage and firmware updates.
4. Medical devices: Stores patient information, device settings, and event logs.
5. Internet of Things (IoT): Supports data storage requirements in IoT devices, such as sensors, actuators, and gateways.

Detailed and Complete Alternative Models

1. 24AA64-I/P: DIP package variant of the 24AA64FT-I/MNY.
2. 24LC64-I/SN: Similar EEPROM chip with extended temperature range (-40°C to +125°C).
3. 24FC64-I/MS: I2C-compatible EEPROM chip with increased write endurance (2 million write cycles).

These alternative models offer similar functionality and can be considered based on specific application requirements.

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