93C76AT-I/MS Product Overview

Introduction

The 93C76AT-I/MS is a versatile integrated circuit (IC) that belongs to the category of serial Electrically Erasable Programmable Read-Only Memory (EEPROM). This entry provides an in-depth overview of the 93C76AT-I/MS, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Serial EEPROM
• Use: Data storage and retrieval in various electronic devices
• Characteristics: Non-volatile, electrically erasable, programmable memory
• Package: MSOP (Mini Small Outline Package)
• Essence: Reliable and efficient data storage solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on supplier

Specifications

• Memory Size: 8 Kbits (1024 x 8 or 512 x 16)
• Interface: SPI (Serial Peripheral Interface)
• Operating Voltage: 2.5V to 5.5V
• Operating Temperature: -40°C to +85°C
• Write Endurance: 1,000,000 cycles
• Data Retention: 100 years

Detailed Pin Configuration

The 93C76AT-I/MS features a standard 8-pin MSOP package with the following pinout: 1. Chip Select (/CS) 2. Serial Data Input (DI) 3. Serial Data Output (DO) 4. Serial Clock (SCK) 5. Write Enable (W) 6. VSS (Ground) 7. NC (No Connection) 8. VCC (Power Supply)

Functional Features

• Sequential Read Operation: Allows for sequential reading of stored data
• Write Protection: Supports hardware write protection to prevent accidental writes
• Self-Timed Write Cycle: Simplifies write operations by eliminating the need for external timing control

Advantages and Disadvantages

Advantages

• Low power consumption
• Compact form factor
• High reliability and endurance
• Wide operating voltage range

Disadvantages

• Limited storage capacity compared to other memory technologies
• Slower write speeds compared to volatile memory

Working Principles

The 93C76AT-I/MS operates by utilizing an internal array of floating-gate transistors to store data. When data needs to be written, the device uses an electric field to trap charge on the floating gate, altering the transistor's conductivity. Reading data involves sensing the transistor's conductivity to retrieve the stored information.

Detailed Application Field Plans

The 93C76AT-I/MS finds extensive use in various applications, including but not limited to: - Automotive electronics - Industrial control systems - Consumer electronics - Medical devices - Communication equipment

Detailed and Complete Alternative Models

Several alternative models to the 93C76AT-I/MS include: - 93C66B-I/MS: Lower capacity variant suitable for space-constrained designs - 93C86A-I/MS: Higher capacity variant for applications requiring increased data storage - 25AA080C-I/MS: SPI-compatible EEPROM with similar specifications and form factor

In conclusion, the 93C76AT-I/MS offers a reliable and efficient solution for non-volatile data storage in a wide range of electronic devices. Its compact form factor, low power consumption, and robust functionality make it a popular choice in diverse industries.

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