AT24C01A-10SU-2.7

Product Overview

Category

AT24C01A-10SU-2.7 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for storing small amounts of non-volatile data in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• Low power consumption: Operates at low voltage levels, making it suitable for battery-powered devices.
• Small form factor: Comes in a compact package, allowing for easy integration into electronic circuits.
• High reliability: Offers robust performance and long-term data retention.

Package

AT24C01A-10SU-2.7 is available in a surface-mount 8-pin SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of this product lies in its ability to provide non-volatile memory storage that can be easily programmed and erased electronically.

Packaging/Quantity

AT24C01A-10SU-2.7 is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory capacity: 1 kilobit (128 bytes)
• Operating voltage: 2.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write cycle endurance: 1 million cycles
• Data retention: 100 years

Detailed Pin Configuration

The AT24C01A-10SU-2.7 chip has the following pin configuration:

1. A0: Chip address input pin
2. A1: Chip address input pin
3. A2: Chip address input pin
4. GND: Ground connection
5. SDA: Serial data input/output
6. SCL: Serial clock input
7. WP: Write protect pin
8. VCC: Power supply voltage

Functional Features

• Random access: Allows reading and writing of individual bytes within the memory array.
• Byte write and page write modes: Supports both byte-level and page-level write operations.
• Hardware write protection: The WP pin can be used to prevent accidental writes to the memory.
• Sequential read operation: Enables efficient retrieval of consecutive data bytes.
• I2C interface: Utilizes the widely adopted I2C (Inter-Integrated Circuit) protocol for communication.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data remains intact even during power loss.
• Easy programmability: Can be electronically programmed and erased.
• Compact size: Small form factor allows for space-efficient integration.
• Low power consumption: Suitable for battery-powered devices.
• High reliability: Offers long-term data retention and robust performance.

Disadvantages

• Limited storage capacity: Only 1 kilobit of memory.
• Slower write speed compared to other memory technologies.
• Susceptible to electromagnetic interference (EMI) due to its electronic nature.

Working Principles

AT24C01A-10SU-2.7 utilizes a combination of floating gate transistors and control circuitry to store and retrieve data. When programming, an electric charge is applied to the floating gate, altering its electrical characteristics. This charge can be removed during erasure, allowing the transistor to return to its original state. The stored charge determines whether a memory cell represents a logical "0" or "1".

Detailed Application Field Plans

AT24C01A-10SU-2.7 finds applications in various fields, including:

1. Microcontrollers: Used for storing configuration data, calibration values, and firmware updates.
2. Computers: Employed in BIOS (Basic Input/Output System) chips for storing system settings.
3. Consumer electronics: Integrated into devices like smart TVs, set-top boxes, and digital cameras for storing user preferences and settings.

Detailed and Complete Alternative Models

Some alternative models to AT24C01A-10SU-2.7 include:

1. AT24C02: Offers double the memory capacity (2 kilobits).
2. AT24C04: Provides four times the memory capacity (4 kilobits).
3. AT24C08: Features eight times the memory capacity (8 kilobits).

These alternative models offer increased storage capacity while maintaining similar functionality and characteristics.

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