AT24C02AN-10SI-1.8

Product Overview

Category

AT24C02AN-10SI-1.8 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• Low power consumption: Operates at low voltage levels, making it energy-efficient.
• High reliability: Offers robust performance and long-term data retention.
• Small form factor: Comes in a compact package, suitable for space-constrained applications.

Package

AT24C02AN-10SI-1.8 is available in an 8-pin small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

AT24C02AN-10SI-1.8 is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory capacity: 2 kilobits (256 bytes)
• Operating voltage: 1.7V to 5.5V
• Operating temperature range: -40°C to +85°C
• Write cycle endurance: 1 million cycles
• Data retention: Up to 100 years

Detailed Pin Configuration

1. A0: Chip address input pin
2. A1: Chip address input pin
3. A2: Chip address input pin
4. GND: Ground connection
5. SDA: Serial data input/output
6. SCL: Serial clock input
7. WP: Write protect pin
8. VCC: Power supply voltage

Functional Features

• Random access: Allows reading and writing of individual bytes within the memory array.
• Byte write and page write modes: Supports both single-byte and multiple-byte write operations.
• Hardware write protection: The WP pin can be used to prevent accidental writes.
• I2C-compatible interface: Uses a two-wire serial communication protocol for easy integration with other devices.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Electrically erasable capability allows for flexible data modification.
• Low power consumption extends battery life in portable devices.
• High reliability ensures long-term data integrity.
• Compact package size enables use in space-constrained applications.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Slower write speeds compared to volatile memory types.
• Relatively higher cost per bit compared to larger memory chips.

Working Principles

AT24C02AN-10SI-1.8 utilizes an EEPROM technology that combines floating-gate transistors and electrically isolated gates. Data is stored by charging or discharging the floating gate, which alters the transistor's threshold voltage. This change in threshold voltage represents the binary state of each memory cell.

During read operations, the stored charge is sensed, allowing the retrieval of the stored data. Write operations involve applying a high voltage to the control gate, which enables electrons to tunnel through the insulating layer and modify the charge on the floating gate.

Detailed Application Field Plans

AT24C02AN-10SI-1.8 finds application in various fields, including: 1. Microcontroller-based systems requiring non-volatile memory storage. 2. Industrial automation equipment for storing configuration parameters. 3. Consumer electronics, such as smart TVs and set-top boxes, for storing user preferences. 4. Automotive electronics, including engine control units and infotainment systems. 5. Medical devices, such as patient monitoring systems and diagnostic equipment.

Detailed and Complete Alternative Models

1. AT24C01A: 1 kilobit (128 bytes) capacity, similar specifications to AT24C02AN-10SI-1.8.
2. AT24C04A: 4 kilobits (512 bytes) capacity, similar specifications to AT24C02AN-10SI-1.8.
3. AT24C08A: 8 kilobits (1024 bytes) capacity, similar specifications to AT24C02AN-10SI-1.8.
4. AT24C16A: 16 kilobits (2048 bytes) capacity, similar specifications to AT24C02AN-10SI-1.8.

These alternative models offer varying memory capacities while maintaining compatibility with the same interface and operating characteristics.

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