AT24C128N-10SU-2.7

Product Overview

Category

AT24C128N-10SU-2.7 belongs to the category of EEPROM (Electrically Erasable Programmable Read-Only Memory) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable and programmable: Allows for easy modification of stored data.
• High storage capacity: The AT24C128N-10SU-2.7 has a capacity of 128 kilobits (16 kilobytes).
• Low power consumption: Operates at a low voltage and consumes minimal power.
• Wide operating temperature range: Can function reliably in temperatures ranging from -40°C to +85°C.

Package

The AT24C128N-10SU-2.7 comes in a small outline SOIC (Small Outline Integrated Circuit) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

The AT24C128N-10SU-2.7 is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Operating Voltage: 1.7V to 5.5V
• Maximum Clock Frequency: 400 kHz
• Write Cycle Time: 10 ms (maximum)
• Data Retention: 100 years (minimum)
• I/O Compatibility: 2-wire serial interface (I2C-compatible)

Detailed Pin Configuration

The AT24C128N-10SU-2.7 has a total of 8 pins, which are as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. SDA: Serial data input/output
4. SCL: Serial clock input
5. WP: Write protect input (optional)
6. A0, A1, A2: Device address inputs (for multiple devices on the same bus)

Functional Features

• Random access: Allows for reading and writing data at any memory location.
• Page write mode: Enables faster data writes by allowing multiple bytes to be written in a single operation.
• Software write protection: Provides the option to protect specific memory areas from being modified.
• Hardware write protection: The WP pin can be used to disable write operations entirely.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Ensures data integrity even during power loss.
• Easy to use: Simple interface and straightforward programming.
• High storage capacity: Offers ample space for storing data.
• Low power consumption: Ideal for battery-powered devices.
• Wide operating temperature range: Suitable for various environments.

Disadvantages

• Limited write endurance: EEPROMs have a finite number of write cycles before they may start to fail.
• Relatively slower write speed compared to other memory technologies.
• Higher cost per bit compared to some other memory types.

Working Principles

The AT24C128N-10SU-2.7 utilizes electrically isolated floating gate transistors to store data. When a byte of data needs to be written, an electrical charge is applied to the floating gate, altering its threshold voltage. This change in threshold voltage determines whether the transistor represents a logic 0 or 1. Reading the stored data involves sensing the threshold voltage of each transistor.

Detailed Application Field Plans

The AT24C128N-10SU-2.7 finds applications in various fields, including but not limited to: - Embedded systems - Industrial automation - Automotive electronics - Smart home devices - Medical equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the AT24C128N-10SU-2.7 include: - AT24C256C-SSHL-T: 256 kilobit EEPROM with a smaller package size. - CAT24C08WI-GT3: 8 kilobit EEPROM with lower power consumption. - M24C64-RMN6TP: 64 kilobit EEPROM with extended temperature range.

These alternative models can be considered based on specific requirements such as storage capacity, package size, power consumption, and operating temperature range.

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