AT24C512W1-10SI-1.8

Product Overview

Category

AT24C512W1-10SI-1.8 belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices, such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: The memory can be erased and reprogrammed electrically.
• High capacity: The AT24C512W1-10SI-1.8 has a capacity of 512 kilobits (64 kilobytes).
• Low power consumption: It operates at a low voltage and consumes minimal power.
• Wide temperature range: It can function reliably in a wide temperature range (-40°C to +85°C).

Package

The AT24C512W1-10SI-1.8 comes in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The AT24C512W1-10SI-1.8 is typically packaged in reels or tubes, with each reel containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 512 kilobits (64 kilobytes)
• Operating Voltage: 1.8V
• Interface: I2C (Two-wire Serial Interface)
• Maximum Clock Frequency: 400 kHz
• Write Cycle Time: 5 ms (maximum)
• Data Retention: 100 years (minimum)

Detailed Pin Configuration

The AT24C512W1-10SI-1.8 has a total of 8 pins, which are assigned specific functions as follows:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect
8. VCC: Power Supply

Functional Features

• Random Access: Allows reading and writing data at any memory location.
• Byte-Level Read and Write: Enables efficient manipulation of individual bytes.
• Page Write: Supports writing multiple bytes in a single operation, enhancing write speed.
• Software Write Protection: Provides the option to protect specific memory areas from accidental modification.
• Chip Erase: Allows erasing the entire memory content for reprogramming.

Advantages and Disadvantages

Advantages

• High storage capacity
• Low power consumption
• Wide temperature range operation
• Reliable data retention
• Compact package size

Disadvantages

• Limited maximum clock frequency
• Relatively slower write cycle time compared to some alternatives

Working Principles

The AT24C512W1-10SI-1.8 utilizes electrically controlled floating gate transistors to store and retrieve digital information. When writing data, an electrical charge is applied to the floating gate, altering its conductivity and storing the desired information. During read operations, the stored charge is detected, allowing the retrieval of the stored data.

Detailed Application Field Plans

The AT24C512W1-10SI-1.8 finds applications in various fields, including but not limited to: - Embedded systems - Industrial automation - Automotive electronics - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the AT24C512W1-10SI-1.8 include: - AT24C256C-SSHL-T: 256 kilobit EEPROM with a different package and voltage rating. - CAT24C512WI-GT3: 512 kilobit EEPROM with an extended temperature range. - M24C64-FDW6TP/K: 64 kilobyte EEPROM with a different interface and package.

Please note that the above alternatives are just a few examples, and there are several other models available in the market with varying specifications and features.

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