AT24C64N-10SI

Product Overview

Category

AT24C64N-10SI belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is commonly used for non-volatile data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data remains even when power is removed.
• Electrically erasable: Data can be erased and reprogrammed electronically.
• High storage capacity: The AT24C64N-10SI has a capacity of 64 kilobits (8 kilobytes).
• Low power consumption: It operates at low voltage and consumes minimal power.
• High reliability: The EEPROM technology ensures reliable data retention and endurance.

Package

The AT24C64N-10SI comes in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The AT24C64N-10SI is typically packaged in reels or tubes, with each containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 64 kilobits (8 kilobytes)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Cycle Endurance: 1 million cycles
• Data Retention: Up to 100 years

Detailed Pin Configuration

The AT24C64N-10SI has a total of 8 pins, each serving a specific function:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect
8. VCC: Power Supply

Functional Features

• Random Access: Allows reading and writing of data at any memory location.
• Byte-Level Operations: Supports individual byte read and write operations.
• Page Write Mode: Enables faster data writes by allowing multiple bytes to be written in a single operation.
• Hardware Write Protection: The WP pin can be used to protect the memory from accidental writes.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• Electrically erasable and reprogrammable, providing flexibility for data updates.
• High storage capacity for various applications.
• Low power consumption, making it suitable for battery-powered devices.
• Reliable data retention and endurance.

Disadvantages

• Limited write cycle endurance compared to other memory technologies.
• Relatively slower write speeds compared to volatile memory types.
• Higher cost per bit compared to some other memory options.

Working Principles

The AT24C64N-10SI utilizes EEPROM technology, which stores data using electrically isolated floating gate transistors. These transistors can be programmed or erased by applying specific voltage levels to their control gates. When reading data, the stored charge in the transistors is measured, determining the logic state of each bit.

Detailed Application Field Plans

The AT24C64N-10SI finds application in various fields, including:

1. Embedded Systems: Used for storing configuration data, firmware updates, and user settings in microcontrollers and embedded systems.
2. Computer Peripherals: Employed in printers, scanners, and other peripherals for storing calibration data and device-specific settings.
3. Consumer Electronics: Integrated into devices like smart TVs, set-top boxes, and audio systems for storing user preferences and system configurations.
4. Automotive Electronics: Utilized in automotive systems for storing critical data such as mileage, vehicle settings, and diagnostic information.

Detailed and Complete Alternative Models

1. AT24C01A: 1 kilobit (128 bytes) capacity EEPROM chip.
2. AT24C256C: 256 kilobits (32 kilobytes) capacity EEPROM chip.
3. AT24CM02: 2 megabits (256 kilobytes) capacity EEPROM chip.
4. AT24MAC602: 64 kilobits (8 kilobytes) capacity EEPROM chip with additional MAC address functionality.

These alternative models offer varying capacities and additional features to suit different application requirements.

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