AT25010N-10SI-2.7

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Non-volatile Serial EEPROM Memory

Characteristics: - Low-power CMOS technology - 1,024 bits of memory organized as 128 words of 8 bits each - Single supply voltage range: 2.7V to 5.5V - High-speed operation: 10 MHz clock rate - Write protect pin for hardware data protection - Self-timed write cycle with auto-erase - 100-year data retention - Industrial temperature range: -40°C to +85°C

Package: SOIC (Small Outline Integrated Circuit)

Essence: The AT25010N-10SI-2.7 is a non-volatile serial EEPROM memory IC designed for low-power applications that require reliable data storage and retrieval.

Packaging/Quantity: The AT25010N-10SI-2.7 is typically sold in reels or tubes containing multiple units. The exact quantity depends on the supplier and customer requirements.

Specifications

• Memory Size: 1,024 bits (128 bytes)
• Interface: Serial I2C (2-wire)
• Operating Voltage: 2.7V to 5.5V
• Clock Rate: Up to 10 MHz
• Write Cycle Time: 5 ms (typical)
• Data Retention: 100 years
• Package Type: SOIC-8

Detailed Pin Configuration

The AT25010N-10SI-2.7 features an 8-pin Small Outline Integrated Circuit (SOIC) package. The pin configuration is as follows:

1. VCC: Supply Voltage
2. SDA: Serial Data Input/Output
3. SCL: Serial Clock Input
4. WP: Write Protect (active low)
5. GND: Ground
6. NC: No Connection
7. NC: No Connection
8. VSS: Supply Voltage Ground

Functional Features

• Non-volatile memory: The AT25010N-10SI-2.7 retains data even when power is removed.
• Serial interface: It uses the I2C protocol for communication with other devices.
• Write protection: The WP pin allows hardware protection of data from accidental writes.
• Self-timed write cycle: The IC automatically erases and writes data during a write operation.

Advantages and Disadvantages

Advantages: - Low-power consumption - Compact size - High-speed operation - Wide operating voltage range - Long data retention period

Disadvantages: - Limited storage capacity (1,024 bits) - Relatively slower write cycle compared to some other EEPROMs

Working Principles

The AT25010N-10SI-2.7 operates based on the principles of electrically erasable programmable read-only memory (EEPROM). It utilizes a floating gate transistor structure to store and retrieve data. When a write operation is initiated, the IC applies a high voltage to the floating gate, allowing electrons to tunnel through the insulating layer and modify the charge state. This process enables data storage in non-volatile memory cells.

Detailed Application Field Plans

The AT25010N-10SI-2.7 is commonly used in various electronic systems that require non-volatile memory for storing configuration data, calibration values, or user settings. Some application fields include:

1. Consumer Electronics: Used in smart TVs, set-top boxes, and audio/video equipment for storing user preferences and firmware updates.
2. Automotive: Employed in automotive electronics for storing vehicle-specific data, such as mileage, service history, and configuration settings.
3. Industrial Control Systems: Utilized in industrial automation and control systems for storing critical parameters, calibration data, and system configurations.
4. Medical Devices: Integrated into medical equipment to store patient-specific settings, device history, and firmware updates.

Detailed and Complete Alternative Models

1. AT25020B-SSHL-T: 2,048-bit Serial EEPROM with extended temperature range (-40°C to +125°C).
2. AT25040AN-10SI-2.7: 4,096-bit Serial EEPROM with a wider operating voltage range (1.8V to 5.5V).
3. AT25128AN-10SU-2.7: 16,384-bit Serial EEPROM with a higher density for applications requiring more storage capacity.
4. AT25256A-10PU-2.7: 32,768-bit Serial EEPROM with faster write cycle time (3 ms typical).

These alternative models offer different memory sizes, operating characteristics, and package options to suit specific application requirements.

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