AT25080AY1-10YI-1.8

Basic Information Overview

Category: Integrated Circuit (IC)

Use: Data Storage

Characteristics: - Non-volatile memory - Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) - Low power consumption - High reliability - Small form factor

Package: 8-pin SOIC (Small Outline Integrated Circuit)

Essence: The AT25080AY1-10YI-1.8 is a serial EEPROM IC that provides non-volatile data storage in various electronic devices.

Packaging/Quantity: The AT25080AY1-10YI-1.8 is typically sold in reels, with 2,000 units per reel.

Specifications

• Memory Size: 8 kilobits (1 kilobyte)
• Interface: SPI (Serial Peripheral Interface)
• Supply Voltage: 1.8V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The AT25080AY1-10YI-1.8 has the following pin configuration:

1. Chip Select (/CS) - Active low input used to enable/disable the device.
2. Serial Clock (SCK) - Input for synchronizing data transfer.
3. Serial Data Input (SI) - Input for shifting data into the device.
4. Serial Data Output (SO) - Output for shifting data out of the device.
5. Write Protect (/WP) - Input used to protect the memory from being written.
6. VCC - Power supply voltage (1.8V).
7. Ground (GND) - Common ground reference.
8. Hold (/HOLD) - Input used to pause serial communication temporarily.

Functional Features

• Byte and Page Write Operations: Allows individual byte or page (up to 32 bytes) write operations.
• Sequential Read: Supports sequential read operation for faster data retrieval.
• Software Protection: Provides software write protection of the entire memory array or selected portions.
• Hardware Protection: Utilizes a hardware write-protect pin (/WP) to prevent accidental writes.
• High-Speed Clock Mode: Supports high-speed clock mode for faster data transfer.

Advantages and Disadvantages

Advantages: - Non-volatile memory ensures data retention even when power is lost. - Low power consumption makes it suitable for battery-powered devices. - High reliability with a long data retention period. - Small form factor allows integration into compact electronic devices. - Flexible write protection options for enhanced security.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Slower write speed compared to some other memory types. - Requires an external microcontroller or host device for communication.

Working Principles

The AT25080AY1-10YI-1.8 operates based on the principles of EEPROM technology. It utilizes a floating gate transistor structure to store and retrieve data. When data is written, an electric charge is trapped in the floating gate, altering the transistor's behavior. This charge can be removed during the erase cycle, allowing the transistor to return to its original state. The stored data can be accessed by applying appropriate voltage levels to the control pins and using the SPI interface for communication.

Detailed Application Field Plans

The AT25080AY1-10YI-1.8 finds applications in various electronic devices that require non-volatile data storage, such as: - Consumer electronics (e.g., smart TVs, set-top boxes) - Automotive systems (e.g., infotainment, engine control units) - Industrial equipment (e.g., sensors, control systems) - Medical devices (e.g., patient monitoring, diagnostic equipment) - Communication devices (e.g., routers, modems)

Detailed and Complete Alternative Models

Some alternative models to the AT25080AY1-10YI-1.8 include: - AT25040A-10PU-2.7: 4 kilobit serial EEPROM with a different package and voltage specifications. - AT25128AN-10SI-2.5: 128 kilobit serial EEPROM with extended temperature range.

These alternative models offer different memory capacities, package options, and voltage requirements to suit specific application needs.

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