AT25128N-10SI-2.7

Product Overview

Category

AT25128N-10SI-2.7 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT25128N-10SI-2.7 has a storage capacity of 128 kilobits (16 kilobytes).
• Low power consumption: It operates at a low voltage and consumes minimal power during read and write operations.
• Fast access time: The device provides quick access to stored data with a maximum access time of 10 microseconds.
• Reliable: It offers high endurance and data retention capabilities, ensuring long-term reliability.
• Compact package: The AT25128N-10SI-2.7 is available in a small surface-mount package, making it suitable for space-constrained applications.

Packaging/Quantity

The AT25128N-10SI-2.7 is typically packaged in tape and reel format, with a quantity of 2500 units per reel.

Specifications

• Memory Type: Serial EEPROM
• Organization: 16 kilobytes (128 kilobits)
• Interface: SPI (Serial Peripheral Interface)
• Supply Voltage: 2.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 100 years
• Endurance: 1 million write cycles

Detailed Pin Configuration

The AT25128N-10SI-2.7 features an 8-pin package with the following pin configuration:

1. Chip Select (/CS)
2. Serial Clock (SCK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. VCC (Power Supply)
7. Ground (GND)
8. Hold (/HOLD)

Functional Features

• Byte and Page Write Operations: The device supports both byte and page write operations, allowing flexible data storage.
• Sequential Read: It enables sequential read operations, facilitating efficient retrieval of stored data.
• Software Protection: The AT25128N-10SI-2.7 offers software protection features to prevent unauthorized access or modification of data.
• Write Protection: The write protect pin (/WP) can be used to disable write operations, ensuring data integrity.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life in portable devices.
• Fast access time enhances overall system performance.
• Reliable operation with high endurance and data retention capabilities.
• Compact package size suitable for space-constrained designs.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively slower write speed compared to volatile memory devices.

Working Principles

The AT25128N-10SI-2.7 utilizes EEPROM (Electrically Erasable Programmable Read-Only Memory) technology. It stores data by electrically charging and discharging specific memory cells within the device. The stored data can be read, modified, or erased using appropriate commands sent through the serial interface.

Detailed Application Field Plans

The AT25128N-10SI-2.7 finds applications in various fields, including but not limited to: 1. Embedded systems: Used for storing configuration data, firmware, and calibration parameters. 2. Automotive electronics: Employed for storing vehicle settings, sensor data, and diagnostic information. 3. Industrial automation: Utilized for storing production data, machine settings, and log information. 4. Consumer electronics: Used in devices like smart TVs, set-top boxes, and gaming consoles for storing user preferences and settings.

Detailed and Complete Alternative Models

1. AT25080A-10PU-2.7: 8 kilobit (1 kilobyte) serial EEPROM with similar specifications.
2. AT25256B-SSHL-T: 256 kilobit (32 kilobytes) serial EEPROM with extended temperature range.
3. AT24C1024C-SSHD-T: 1 megabit (128 kilobytes) serial EEPROM with higher storage capacity.

These alternative models offer different storage capacities and features to cater to diverse application requirements.

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