AT27BV256-12RC

Product Overview

Category

AT27BV256-12RC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT27BV256-12RC retains stored data even when power is removed.
• High capacity: It has a storage capacity of 256 kilobits (32 kilobytes).
• Fast access time: The device offers a fast access time of 120 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The AT27BV256-12RC is available in a standard 28-pin plastic dual in-line package (PDIP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT27BV256-12RC is typically packaged in reels or tubes, with a quantity of 1000 units per reel/tube.

Specifications

• Organization: 32K x 8 bits
• Supply voltage: 2.7V - 3.6V
• Access time: 120 ns
• Standby current: 10 µA (max)
• Operating temperature range: -40°C to +85°C
• Data retention: 20 years (minimum)

Pin Configuration

The AT27BV256-12RC has a total of 28 pins. The pin configuration is as follows:

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. CE#
13. OE#
14. WE#
15. I/O0
16. I/O1
17. I/O2
18. I/O3
19. VCC
20. GND
21. NC
22. A8
23. A9
24. A11
25. A10
26. A14
27. A13
28. BYTE#

Functional Features

• Byte-wide operations: The AT27BV256-12RC supports both byte-level read and write operations.
• Chip enable control: The CE# pin allows for easy activation or deactivation of the device.
• Output enable control: The OE# pin enables or disables the output buffers, allowing for efficient data transfer.
• Write enable control: The WE# pin controls the write operation, ensuring data integrity.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data is retained even without power, ensuring data integrity.
• High capacity: The 256 kilobit capacity provides ample storage space for various applications.
• Fast access time: The 120 ns access time allows for quick retrieval of stored data.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered devices.

Disadvantages

• Limited storage capacity: Compared to other memory devices, the AT27BV256-12RC has a relatively lower storage capacity.
• Higher cost: The non-volatile nature of the device increases its manufacturing cost compared to volatile memory options.

Working Principles

The AT27BV256-12RC utilizes a combination of electronic circuits and semiconductor technology to store and retrieve data. It employs a floating-gate transistor structure that allows for non-volatile storage of information. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be later sensed to retrieve the stored data.

Detailed Application Field Plans

The AT27BV256-12RC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

1. AT27BV512-15JC: This model offers double the storage capacity (512 kilobits) and a slightly slower access time of 150 ns.
2. AT27BV1024-20RI: With a storage capacity of 1 megabit and an access time of 200 ns, this model provides even higher capacity at the cost of slightly slower performance.

These alternative models offer increased storage capacity options while maintaining similar functionality to the AT27BV256-12RC.

In conclusion, the AT27BV256-12RC is a non-volatile memory device that provides reliable data storage for various electronic applications. With its high capacity, fast access time, and low power consumption, it offers advantages in terms of data integrity and performance. However, its limited storage capacity and relatively higher cost are notable disadvantages. The device operates based on the principles of floating-gate transistor technology,