AT27C4096-55JC

Introduction

The AT27C4096-55JC is a member of the AT27C4096 series of programmable read-only memory (PROM) integrated circuits. This entry provides an overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: Programmable Read-Only Memory (PROM)
• Use: The AT27C4096-55JC is used for storing non-volatile data and program code in various electronic systems, including embedded systems, consumer electronics, automotive applications, and industrial equipment.
• Characteristics: It offers high-speed access, low power consumption, and reliable data retention.
• Package: The AT27C4096-55JC is available in a 44-lead PLCC (Plastic Leaded Chip Carrier) package.
• Essence: Its essence lies in providing non-volatile memory storage with a focus on reliability and performance.
• Packaging/Quantity: The AT27C4096-55JC is typically supplied in tubes or trays, with quantities varying based on the supplier and customer requirements.

Specifications

• Memory Capacity: 4 Megabits (512K x 8)
• Access Time: 55ns
• Operating Voltage: 5V ± 10%
• Operating Temperature Range: -40°C to +125°C
• Programming Voltage: 12V ± 5%
• Typical Standby Current: 100μA
• Typical Active Current: 30mA

Detailed Pin Configuration

The AT27C4096-55JC features a 44-pin PLCC package with the following pin configuration: 1. A0-A18: Address Inputs 2. Q0-Q7: Data Outputs 3. CE: Chip Enable 4. OE: Output Enable 5. WE: Write Enable 6. VCC: Power Supply 7. VPP: Programming Voltage 8. GND: Ground

Functional Features

• High-Speed Access: The AT27C4096-55JC offers fast access times, making it suitable for applications requiring quick data retrieval.
• Low Power Consumption: It operates with low standby and active currents, contributing to energy-efficient designs.
• Reliable Data Retention: The PROM ensures data integrity and retention over extended periods, enhancing system reliability.

Advantages and Disadvantages

Advantages

• Non-Volatile Storage: Retains data even when power is removed.
• High-Speed Access: Enables rapid retrieval of stored information.
• Wide Operating Temperature Range: Suitable for diverse environmental conditions.

Disadvantages

• Limited Rewrite Capability: Unlike some other memory technologies, PROMs have limited or no capability for rewriting data once programmed.
• Higher Cost per Bit: Compared to certain volatile memory types, PROMs can be relatively more expensive per bit of storage.

Working Principles

The AT27C4096-55JC utilizes a floating-gate transistor structure to store data. During programming, a higher voltage is applied to the control gate, causing electrons to tunnel onto the floating gate, trapping charge and altering the cell's threshold voltage. This process is irreversible, resulting in the programmed data being retained even when power is removed.

Detailed Application Field Plans

The AT27C4096-55JC finds application in various fields, including: - Embedded Systems: Used for firmware storage in microcontrollers and digital signal processors. - Consumer Electronics: Employed in devices such as set-top boxes, gaming consoles, and home appliances for program storage. - Automotive Applications: Utilized in automotive control units for storing critical operational data and code. - Industrial Equipment: Integrated into industrial automation systems for program and configuration storage.

Detailed and Complete Alternative Models

• AT27C010: 1 Megabit (128K x 8) PROM
• AT27C020: 2 Megabit (256K x 8) PROM
• AT27C040: 4 Megabit (512K x 8) PROM
• AT27C080: 8 Megabit (1M x 8) PROM
• AT27C160: 16 Megabit (2M x 8) PROM

In summary, the AT27C4096-55JC is a versatile PROM IC offering high-speed access, low power consumption, and reliable data retention. Its application spans across various industries, and it has several alternative models catering to different memory capacity requirements.

Word Count: 611