AT29BV020-20TC

Product Overview

Category

AT29BV020-20TC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The AT29BV020-20TC retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: With a maximum access time of 20 nanoseconds, it ensures quick retrieval of stored data.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT29BV020-20TC is available in a surface-mount 32-lead Thin Small Outline Package (TSOP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for critical data in electronic systems.

Packaging/Quantity

The AT29BV020-20TC is typically packaged in reels containing a quantity of 250 units per reel.

Specifications

• Memory Type: Flash
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Maximum Access Time: 20 ns
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE - Chip Enable Input
18. OE - Output Enable Input
19. WE - Write Enable Input
20. VCC - Power Supply
21. NC - No Connection
22. DQ0 - Data Input/Output
23. DQ1 - Data Input/Output
24. DQ2 - Data Input/Output
25. DQ3 - Data Input/Output
26. DQ4 - Data Input/Output
27. DQ5 - Data Input/Output
28. DQ6 - Data Input/Output
29. DQ7 - Data Input/Output
30. RY/BY# - Ready/Busy Output
31. GND - Ground
32. NC - No Connection

Functional Features

• Byte-wide operations: The AT29BV020-20TC allows individual byte-level read and write operations.
• Sector erase capability: It supports sector-wise erasure, enabling efficient memory management.
• Hardware data protection: The device features a hardware protection mechanism to prevent accidental writes or erasures.
• Automatic sleep mode: When not in use, the AT29BV020-20TC enters a low-power sleep mode to conserve energy.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time enables quick retrieval of data.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited erase/program cycle endurance compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.

Working Principles

The AT29BV020-20TC utilizes flash memory technology, which stores data in floating-gate transistors. These transistors can retain their charge even when power is removed, making the stored data non-volatile. The device operates by applying appropriate voltage levels to the address and control pins, allowing read, write, and erase operations on specific memory locations.

Detailed Application Field Plans

The AT29BV020-20TC finds applications in various fields, including: 1. Microcontrollers: Used for program storage in microcontroller-based systems. 2. Embedded Systems: Provides non-volatile storage for critical data in embedded systems. 3. Consumer Electronics: Enables data storage in devices such as digital cameras, set-top boxes, and portable media players.

Detailed and Complete Alternative Models

1. AT29C010A-12PC: 1 Megabit (128 Kilobytes) Flash Memory with a maximum access time of 120 nanoseconds.
2. AT45DB161E-SHN-T: 16 Megabit (2 Megabytes) DataFlash Memory with sector erase capability