AT29LV256-20JC

Product Overview

Category

AT29LV256-20JC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 256 kilobits (32 kilobytes).
• Fast access time: Operates at a speed of 200 nanoseconds.
• Low power consumption: Designed to minimize energy usage.
• Reliable: Provides high endurance and data retention.

Package

AT29LV256-20JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT29LV256-20JC lies in its ability to provide reliable, non-volatile memory storage with fast access times and low power consumption.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT29LV256-20JC chips. The exact quantity may vary depending on the supplier and customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 32K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 200 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. VCC
21. GND
22. I/O4
23. I/O5
24. I/O6
25. I/O7
26. A8
27. A9
28. A11
29. A10
30. RESET#
31. NC
32. NC

Functional Features

• Byte-wide access: Allows individual bytes to be read or written.
• Sector erase capability: Enables selective erasure of memory sectors.
• Hardware and software data protection: Provides mechanisms to prevent accidental modification or deletion of stored data.
• Automatic sleep mode: Reduces power consumption when the device is idle.
• Fast programming time: Facilitates quick data storage operations.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High endurance and reliability.
• Low power consumption.
• Fast access times.
• Sector erase capability allows efficient memory management.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively slower access times compared to volatile memory.

Working Principles

AT29LV256-20JC utilizes flash EEPROM technology, which combines the benefits of both non-volatile memory and electrically erasable programmable read-only memory (EEPROM). It stores data in floating gate transistors, which can retain charge even when power is removed. The memory cells are organized into sectors, allowing for selective erasure and programming. Data can be read from or written to the memory using appropriate control signals.

Detailed Application Field Plans

AT29LV256-20JC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its reliable non-volatile storage capability makes it suitable for applications that require data persistence, such as firmware storage, configuration settings, and program code storage.

Detailed and Complete Alternative Models

Some alternative models to AT29LV256-20JC include: - AT28C256: A similar flash EEPROM device with a lower access time of 150 ns. - AT49BV256: A parallel flash memory device with a higher capacity of 256 megabits (32 megabytes). - AT25SF256: A serial flash memory device with a smaller form factor and lower power consumption.

These alternative models offer different features and specifications, allowing users to choose the most suitable option based on their specific requirements.

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