AT49BV001-12VI

Product Overview

Category

AT49BV001-12VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Low power consumption: Operates efficiently with minimal power requirements.
• Fast access time: Provides quick data retrieval with a maximum access time of 120 nanoseconds.

Package

AT49BV001-12VI is available in a standard 32-pin plastic package.

Essence

The essence of AT49BV001-12VI lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49BV001-12VI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns (typical), 120 ns (maximum)
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The AT49BV001-12VI has a total of 32 pins, each serving a specific purpose. Here is a detailed pin configuration:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. RP: Reset/Power-down
7. VCC: Power Supply
8. GND: Ground

Functional Features

• Easy integration: Compatible with various microcontrollers and electronic systems.
• Versatile operation modes: Supports both read and write operations.
• Sector erase capability: Allows for selective erasure of specific memory sectors.
• Hardware data protection: Provides additional security by preventing accidental writes.

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity accommodates a wide range of applications.
• Low power consumption prolongs battery life in portable devices.
• Fast access time enables quick data retrieval.

Disadvantages

• Limited erase/program cycle endurance compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.
• Susceptible to electromagnetic interference (EMI) due to its semiconductor nature.

Working Principles

AT49BV001-12VI utilizes flash EEPROM technology, which combines the benefits of both flash memory and EEPROM. It stores data using floating-gate transistors that can retain charge even when not powered. The data is written by applying a high voltage to the gate, while erasing is achieved by removing the charge from the floating gate.

Detailed Application Field Plans

AT49BV001-12VI finds application in various fields, including but not limited to: 1. Consumer electronics: Used in digital cameras, MP3 players, and set-top boxes for data storage. 2. Automotive industry: Employed in car audio systems, navigation devices, and engine control units. 3. Industrial automation: Utilized in programmable logic controllers (PLCs) and human-machine interfaces (HMIs). 4. Telecommunications: Integrated into routers, switches, and network equipment for configuration storage.

Detailed and Complete Alternative Models

1. AT49BV002-20JI: Offers double the storage capacity with 2 megabits (256 kilobytes) of memory.
2. AT49BV008-90TI: Provides higher access speed with a maximum access time of 90 nanoseconds.
3. AT49BV040-70VI: Features a larger memory size of 4 megabits (512 kilobytes) for more extensive data storage.

These alternative models offer different specifications and can be considered based on specific application requirements.

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