AT49BV001-90JC

Product Overview

Category

AT49BV001-90JC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT49BV001-90JC has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It offers a fast access time of 90 nanoseconds.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49BV001-90JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic systems.

Packaging/Quantity

The AT49BV001-90JC is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49BV001-90JC has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. A15
14. A13
15. A8
16. A9
17. A11
18. A10
19. CE#
20. OE#
21. WE#
22. I/O0
23. I/O1
24. I/O2
25. I/O3
26. I/O4
27. I/O5
28. I/O6
29. I/O7
30. VCC
31. GND
32. NC

Functional Features

• Byte-wide access: The AT49BV001-90JC allows for byte-level read and write operations.
• Sector erase capability: It supports sector erase operations, allowing specific portions of the memory to be erased.
• Hardware data protection: The device includes a hardware protection mechanism to prevent accidental writes to critical data.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited erase/write endurance compared to other non-volatile memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.

Working Principles

The AT49BV001-90JC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The device uses a combination of transistors and floating gate structures to trap and release electrons, representing binary data.

Detailed Application Field Plans

The AT49BV001-90JC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to the AT49BV001-90JC include: - AT49BV002-90JC: 2 megabit flash EEPROM with similar specifications. - AT45DB011D-SU: 1 megabit DataFlash memory with additional features like dual-interface and sector protection.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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