AT49BV002NT-12JC

Product Overview

Category

AT49BV002NT-12JC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The AT49BV002NT-12JC retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: With a maximum access time of 120 nanoseconds, it ensures quick retrieval of data.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49BV002NT-12JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic devices, ensuring data integrity and quick access.

Packaging/Quantity

The AT49BV002NT-12JC is typically packaged in reels or tubes, with each reel/tube containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49BV002NT-12JC has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. RY/BY#
27. RESET#
28. VSS
29. A15
30. A13
31. A11
32. A8

Functional Features

• Byte-wide and word-wide operations: The AT49BV002NT-12JC supports both byte and word-level read, write, and erase operations.
• Sector erase capability: It allows for erasing specific sectors of the memory, enabling efficient data management.
• Hardware and software protection: The device offers various protection mechanisms to prevent unauthorized access or modification of stored data.
• Automatic sleep mode: When not in use, the AT49BV002NT-12JC enters a low-power sleep mode, conserving energy.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity suitable for a wide range of applications.
• Fast access time enables quick retrieval of data.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited erase/program cycle endurance compared to some other non-volatile memory technologies.
• Relatively higher cost per bit compared to certain alternative memory options.

Working Principles

The AT49BV002NT-12JC utilizes flash EEPROM technology for data storage. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells store data as electrical charges, which can be read by applying appropriate voltage levels to the device's pins. The device uses various control signals to perform read, write, and erase operations on specific memory locations.

Detailed Application Field Plans

The AT49BV002NT-12JC finds applications in a wide range of electronic devices, including but not limited to: - Microcontrollers - Embedded systems - Consumer electronics (e.g., digital cameras, set-top boxes) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. AT49BV001T-12JC: 1 megabit non-volatile memory with similar characteristics and package.
2. AT49BV004T-12JC: 4 megabit non-volatile memory with similar characteristics and package.
3. AT45DB021D-SU: 2 megabit serial flash memory with different package and interface options.

These alternative models offer similar functionality and can be considered based on specific requirements and compatibility with the target system.

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