AT49BV512-90VC

Product Overview

Category

AT49BV512-90VC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: The AT49BV512-90VC has a storage capacity of 512 kilobits.
• Fast access time: It operates at a speed of 90 nanoseconds.
• Low power consumption: Designed to minimize power usage.
• Reliable: Offers high endurance and data retention capabilities.

Package

The AT49BV512-90VC is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of AT49BV512-90VC lies in its ability to provide reliable and non-volatile data storage in electronic systems.

Packaging/Quantity

The product is typically packaged in trays or reels, with each containing a specific quantity of AT49BV512-90VC units.

Specifications

• Storage Capacity: 512 kilobits
• Access Time: 90 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The AT49BV512-90VC features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RY/BY: Ready/Busy output
8. RESET: Reset input
9. WP: Write protect
10. NC: No connection

Functional Features

• Random access: Allows data to be read from or written to any memory location.
• Erase and program operations: Supports both erasing and programming of data.
• Sector architecture: Divides the memory into sectors for efficient management.
• Hardware and software protection: Provides mechanisms to protect data from unauthorized access or modification.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data is retained even without power, ensuring data integrity.
• High capacity: Offers ample storage space for various applications.
• Fast access time: Enables quick retrieval and storage of data.
• Low power consumption: Helps conserve energy in electronic systems.

Disadvantages

• Limited rewrite cycles: The memory cells have a finite number of erase/write cycles.
• Relatively larger package size: Compared to newer memory technologies, the package size may be larger.

Working Principles

The AT49BV512-90VC utilizes flash memory technology. It stores data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s). To read data, the stored charges are measured, and the corresponding values are retrieved. Writing and erasing data involve applying specific voltage levels to modify the charge levels within the memory cells.

Detailed Application Field Plans

The AT49BV512-90VC finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• AT49BV512-70VC
• AT49BV512-12TC
• AT49BV512-15TC
• AT49BV512-20TC

These alternative models offer different specifications and characteristics, allowing users to choose the most suitable option for their specific requirements.

In conclusion, the AT49BV512-90VC is a non-volatile memory device with a high storage capacity, fast access time, and low power consumption. It finds application in diverse electronic systems and offers advantages such as data integrity and ample storage space. However, it has limitations regarding rewrite cycles and package size. Alternative models with varying specifications are available to cater to different needs.