AT49BV8192AT-11TC

Product Overview

Category

The AT49BV8192AT-11TC belongs to the category of non-volatile memory devices.

Use

It is primarily used for data storage and retrieval in various electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 8192 kilobits (1 megabyte).
• Fast access time: Provides quick data retrieval with an access time of 11 nanoseconds.
• Low power consumption: Operates efficiently with low power requirements.
• Reliable: Ensures data integrity and durability.

Package

The AT49BV8192AT-11TC is available in a surface-mount TSOP package.

Essence

This memory device is essential for storing and accessing critical data in electronic systems.

Packaging/Quantity

The AT49BV8192AT-11TC is typically packaged in reels, with each reel containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 8192 kilobits (1024 kilobytes)
• Access Time: 11 ns
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: TSOP

Detailed Pin Configuration

The AT49BV8192AT-11TC has a total of 32 pins, which are configured as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE - Chip Enable Input
18. OE - Output Enable Input
19. WE - Write Enable Input
20. BYTE - Byte/Word Organization Input
21. VCC - Power Supply
22. DQ0 - Data Input/Output
23. DQ1 - Data Input/Output
24. DQ2 - Data Input/Output
25. DQ3 - Data Input/Output
26. DQ4 - Data Input/Output
27. DQ5 - Data Input/Output
28. DQ6 - Data Input/Output
29. DQ7 - Data Input/Output
30. RY/BY# - Ready/Busy Output
31. RESET# - Reset Input
32. GND - Ground

Functional Features

• High-speed data access: The AT49BV8192AT-11TC offers fast read and write operations, enabling efficient data transfer.
• Sector erase capability: It allows for selective erasure of specific memory sectors, enhancing flexibility in data management.
• Automatic sleep mode: The device enters a low-power sleep mode when not in use, conserving energy.
• Hardware and software protection: Provides security features to prevent unauthorized access or modification of stored data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Low power consumption
• Reliable data retention
• Flexible sector erase capability

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before degradation may occur.
• Higher cost compared to other memory technologies.

Working Principles

The AT49BV8192AT-11TC utilizes flash memory technology, which stores data in floating-gate transistors. These transistors can retain their charge even when power is removed, making the memory non-volatile. The device uses an address bus and control signals to access specific memory locations for read or write operations.

Detailed Application Field Plans

The AT49BV8192AT-11TC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49BV8192A-11TC: Similar to the AT49BV8192AT-11TC, but without the extended temperature range.
2. AT49BV8192AT-12TC: Offers a slightly faster access time of 12 nanoseconds.
3. AT49BV8192AT-10TC: Provides a slower access time of 10 nanoseconds.

These alternative models offer similar functionality and compatibility with different system requirements.

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