AT49F001-12JI

Product Overview

Category

AT49F001-12JI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: Can store up to 1 megabit (128 kilobytes) of data.
• Fast access time: Provides quick read and write operations.
• Low power consumption: Optimized for energy efficiency.
• Durable: Withstands harsh environmental conditions.
• Easy integration: Compatible with various electronic systems.

Package

AT49F001-12JI is available in a standard JEDEC 32-pin PLCC package.

Essence

The essence of AT49F001-12JI lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

AT49F001-12JI is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The pin configuration of AT49F001-12JI is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Byte-wide operations: Supports individual byte programming and erasing.
• Hardware and software protection: Provides mechanisms to prevent accidental modification of data.
• Automatic sleep mode: Reduces power consumption when not in use.
• Sector erase capability: Allows selective erasure of memory sectors.
• Fast programming time: Enables quick data storage.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Non-volatile nature ensures data retention even during power loss.
• Fast access time enhances system performance.
• Low power consumption prolongs battery life.
• Durable construction withstands harsh environments.

Disadvantages

• Limited erase/program cycle endurance compared to some other memory technologies.
• Relatively higher cost per bit compared to certain alternatives.
• Requires careful handling to avoid electrostatic discharge (ESD) damage.

Working Principles

AT49F001-12JI utilizes flash EEPROM technology, which combines the benefits of both electrically erasable programmable read-only memory (EEPROM) and flash memory. It stores data by trapping electrons in a floating gate, allowing the information to be retained even without power. The stored data can be read, erased, and programmed using specific electrical signals.

Detailed Application Field Plans

AT49F001-12JI finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to AT49F001-12JI that offer similar functionality include: - AT49BV001T: Offers a lower voltage range for compatibility with low-power systems. - AT49LV001T: Provides extended temperature range for harsh environments. - AT49F002NT: Doubles the storage capacity to 2 megabits.

These alternatives can be considered based on specific project requirements and system constraints.

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