AT49F001N-70TC

Product Overview

Category

AT49F001N-70TC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49F001N-70TC retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: The AT49F001N-70TC operates on low power, making it suitable for battery-powered devices.

Package

The AT49F001N-70TC comes in a standard 32-pin Thin Small Outline Package (TSOP).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The AT49F001N-70TC is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 5V
• Access Time: 70 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F001N-70TC has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. RP#
29. RY/BY#
30. RESET#
31. A8
32. A9

Functional Features

• Easy integration: The AT49F001N-70TC can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data transfer.
• Versatile interface: This device supports a standard parallel interface, making it compatible with a wide range of microcontrollers and processors.
• Sector erase capability: The AT49F001N-70TC allows for erasing specific sectors of memory, providing flexibility in data management.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase/program cycle endurance may affect the lifespan of the device.
• The TSOP package may require additional space on the PCB compared to smaller form factors.

Working Principles

The AT49F001N-70TC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cells, altering their state. To read the stored data, the cells are accessed and their states are detected. This non-volatile memory technology allows for reliable and long-term data storage.

Detailed Application Field Plans

The AT49F001N-70TC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-90TC: Similar to the AT49F001N-70TC, but with a higher capacity of 2 megabits.
2. AT49F010-70TC: Offers a larger capacity of 10 megabits while maintaining similar characteristics.
3. AT49LV001NT-90TC: A low-voltage variant with a capacity of 1 megabit and an access time of 90 ns.

These alternative models provide options with varying capacities and specifications to suit different application requirements.

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