AT49F001N-90VI

Product Overview

Category

AT49F001N-90VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data remains intact even when power is removed.
• High capacity: The AT49F001N-90VI has a storage capacity of 1 megabit.
• Fast operation: It operates at a speed of 90 nanoseconds.
• Low power consumption: This device is designed to minimize power usage.
• Reliable: It offers high endurance and data retention capabilities.

Package

The AT49F001N-90VI is available in a 32-pin plastic DIP (Dual In-line Package).

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F001N-90VI is typically packaged in reels or tubes, with a quantity of 25 pieces per package.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 1 Megabit
• Organization: 128K x 8
• Supply Voltage: 4.5V - 5.5V
• Access Time: 90 Nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The AT49F001N-90VI has a total of 32 pins. Here is the detailed pin configuration:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy integration: The AT49F001N-90VI can be easily integrated into various electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Versatile interface: The parallel interface allows for easy communication with other system components.
• Low power consumption: This device is designed to minimize power usage, making it suitable for battery-powered applications.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data integrity even during power loss.
• High capacity allows for storing a large amount of data.
• Fast operation speed enables quick data access.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Frequent write cycles may reduce the lifespan of the memory cells.
• Larger physical size compared to newer memory technologies.
• Parallel interface may require more pins and complex circuitry.

Working Principles

The AT49F001N-90VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cells, altering their state. To read the stored data, the memory cells are accessed and their states are detected. This process allows for non-volatile storage and retrieval of data.

Detailed Application Field Plans

The AT49F001N-90VI is widely used in various electronic systems, including but not limited to:

1. Embedded systems: It provides non-volatile storage for firmware and configuration data.
2. Consumer electronics: Used in devices such as digital cameras, set-top boxes, and gaming consoles for data storage.
3. Automotive applications: Enables storing critical data like firmware updates and vehicle parameters.
4. Industrial control systems: Used for storing program code and data in automation and control applications.

Detailed and Complete Alternative Models

1. AT49F002N-90VI: Similar to AT49F001N-90VI but with double the capacity (2 megabits).
2. AT49F010-90TI: Offers 10 megabits of storage capacity with similar characteristics.
3. AT45DB011D-SU: A serial interface flash memory device with 1 megabit capacity and additional features like sector erase and page program.

These alternative models provide options with varying capacities and interfaces to suit different application requirements.

In conclusion, the AT49F001N-90VI is a reliable and high-capacity non-volatile memory device. Its fast operation