AT49F001T-55VI

Product Overview

Category

AT49F001T-55VI belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The AT49F001T-55VI retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It offers a fast access time of 55 nanoseconds.
• Low power consumption: The AT49F001T-55VI operates on low power, making it suitable for battery-powered devices.

Package

The AT49F001T-55VI is available in a 32-pin plastic DIP (Dual In-line Package) or a 32-pin TSOP (Thin Small Outline Package).

Essence

The essence of the AT49F001T-55VI is its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Storage Capacity: 1 Megabit (128 Kilobytes)
• Access Time: 55 Nanoseconds
• Supply Voltage: 5V ±10%
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin DIP or 32-pin TSOP

Detailed Pin Configuration

The AT49F001T-55VI has a total of 32 pins. The pin configuration is as follows:

1. A9
2. A8
3. A7
4. A6
5. A5
6. A4
7. A3
8. A2
9. A1
10. A0
11. WE#
12. OE#
13. CE#
14. VCC
15. DQ0
16. DQ1
17. DQ2
18. DQ3
19. DQ4
20. DQ5
21. DQ6
22. DQ7
23. BYTE#
24. RESET#
25. RP#
26. NC
27. NC
28. GND
29. NC
30. NC
31. NC
32. NC

Functional Features

• Easy integration: The AT49F001T-55VI can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data access.
• Sector erase capability: This device supports sector erase operations, allowing selective erasure of specific memory sectors.
• Data protection: The AT49F001T-55VI incorporates various mechanisms to protect stored data from accidental modification or corruption.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing a significant amount of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited storage capacity compared to newer memory technologies.
• Relatively slower access times compared to modern flash memory devices.

Working Principles

The AT49F001T-55VI utilizes Flash memory technology to store data. It employs a combination of floating-gate transistors and control circuitry to achieve non-volatile storage. When data is written, charges are trapped in the floating gate, altering the transistor's behavior and preserving the stored information. During read operations, the control circuitry retrieves the stored charges and interprets them as data.

Detailed Application Field Plans

The AT49F001T-55VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• AT49F002T-55VI: 2 Megabit (256 Kilobytes) capacity
• AT49F004T-55VI: 4 Megabit (512 Kilobytes) capacity
• AT49F008T-55VI: 8 Megabit (1 Megabyte) capacity
• AT49F016T-55VI: 16 Megabit (2 Megabytes) capacity

These alternative models offer increased storage capacities while maintaining similar characteristics and functionality to the AT49F001T-55VI.

In conclusion, the AT49F001T-55VI is a non-volatile memory device with a storage capacity of 1 megabit. It offers fast access times, low power consumption, and sector erase capability. While it may have limitations in terms of storage capacity compared to newer technologies, it remains a reliable choice for various electronic systems.