AT49F002-12JI

Product Overview

Category

AT49F002-12JI belongs to the category of non-volatile memory devices.

Use

It is commonly used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 120 nanoseconds.
• Low power consumption.
• Easy to integrate into various electronic systems.

Package

AT49F002-12JI is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT49F002-12JI lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

AT49F002-12JI is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A14
4. A13
5. A12
6. A7
7. A6
8. A5
9. A4
10. A3
11. A2
12. A1
13. A0
14. VCC
15. OE#
16. CE#
17. WE#
18. I/O0
19. I/O1
20. I/O2
21. I/O3
22. I/O4
23. I/O5
24. I/O6
25. I/O7
26. RY/BY#
27. RESET#
28. NC
29. GND
30. A8
31. A9
32. A11

Functional Features

• Byte-wide random access for efficient data retrieval.
• In-system programmable and erasable.
• Sector erase capability for flexible memory management.
• Hardware and software data protection mechanisms.
• Low power consumption in standby mode.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Easy integration into various electronic systems due to standard package format.

Disadvantages

• Limited erase/write cycle endurance compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.

Working Principles

AT49F002-12JI utilizes flash EEPROM technology, which combines the benefits of both EPROM (Erasable Programmable Read-Only Memory) and EEPROM (Electrically Erasable Programmable Read-Only Memory). It stores data by trapping electrons in a floating gate, allowing for non-volatile storage. The memory can be programmed and erased electrically using specific voltage levels and timing sequences.

Detailed Application Field Plans

AT49F002-12JI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49F002-12JI include: - AT49BV002T: Similar specifications with additional features like burst mode operation. - AM29F002B: Comparable characteristics and pin configuration. - M29F200BB: Equivalent capacity and access time.

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