AT49F002-55VI

Product Overview

Category

AT49F002-55VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 55 nanoseconds.
• Low power consumption.
• Reliable and durable.

Package

AT49F002-55VI is available in a standard 32-pin plastic DIP (Dual In-line Package).

Essence

The essence of AT49F002-55VI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

AT49F002-55VI is typically packaged in reels or tubes, with each reel/tube containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. GND
25. NC
26. NC
27. NC
28. VCC
29. A14
30. A13
31. A8
32. A9

Functional Features

• Easy to interface with microcontrollers and other digital systems.
• High-speed data transfer.
• Supports both read and write operations.
• Built-in hardware and software protection mechanisms.
• Low power consumption during standby mode.

Advantages

• Non-volatile memory ensures data retention even in the absence of power.
• Fast access time allows for quick retrieval of stored information.
• High storage capacity accommodates a large amount of data.
• Reliable and durable, suitable for various applications.
• Low power consumption helps conserve energy.

Disadvantages

• Limited erase/write cycle endurance compared to some other memory technologies.
• Relatively higher cost per bit compared to certain alternatives.
• Requires careful handling to prevent damage from electrostatic discharge.

Working Principles

AT49F002-55VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells, each capable of holding one bit of information. The data is stored by trapping electric charges within the floating gate of each cell. These charges determine whether the cell represents a "0" or a "1". To read or modify the data, specific voltage levels are applied to the control pins of the device.

Detailed Application Field Plans

AT49F002-55VI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT49F002-55VI include: - AT49BV002T: Similar specifications with additional features like burst mode and sector protection. - SST39SF020A: Comparable storage capacity with faster access time and higher erase/write cycle endurance. - MX29LV320T: Higher storage capacity with similar access time and erase/write cycle endurance.

In conclusion, AT49F002-55VI is a non-volatile memory device that provides reliable and high-capacity storage for electronic systems. Its fast access time, low power consumption, and durability make it suitable for various applications. However, it has limitations in terms of erase/write cycle endurance and cost per bit. Alternative models offer different features and specifications to cater to specific requirements.