AT49F002AN-55JU

Product Overview

Category

AT49F002AN-55JU belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49F002AN-55JU has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It offers a fast access time of 55 nanoseconds.
• Low power consumption: The device operates at low power, making it suitable for battery-powered applications.

Package

The AT49F002AN-55JU is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49F002AN-55JU is typically packaged in reels or tubes, with a quantity of 100 units per package.

Specifications

• Memory Type: Flash EEPROM
• Capacity: 2 Megabits (256 Kilobytes)
• Access Time: 55 Nanoseconds
• Supply Voltage: 5V
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-pin PLCC

Detailed Pin Configuration

The AT49F002AN-55JU has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VPP
13. WE#
14. OE#
15. CE#
16. BYTE#
17. NC
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. VCC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy interface: The AT49F002AN-55JU supports a standard parallel interface, making it compatible with a wide range of systems.
• Sector erase capability: It allows for erasing data in sectors, enabling efficient memory management.
• Write protection: The device offers write protection features to prevent accidental modification of stored data.
• High reliability: With its non-volatile nature and robust design, the AT49F002AN-55JU ensures reliable data storage.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Fast access time allows for quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.
• Easy integration into existing systems due to the standard parallel interface.

Disadvantages

• Limited storage capacity compared to other modern memory devices.
• Erasing data requires sector-wise operations, which may be time-consuming in certain applications.

Working Principles

The AT49F002AN-55JU utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. When data is written, an electrical charge is applied to the memory cell, altering its state. This altered state represents the stored data. The stored data can be read by applying appropriate voltage levels to the memory cells. The non-volatile nature of the memory cells ensures that the data remains intact even when power is removed.

Detailed Application Field Plans

The AT49F002AN-55JU finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its reliable and non-volatile storage capabilities make it suitable for applications where data integrity is crucial.

Detailed and Complete Alternative Models

• AT49F002N-55JU
• AT49F002NT-55JU
• AT49F002T-55JU
• AT49F002BT-55JU

These alternative models offer similar specifications and functionality, providing options for different system requirements.

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