AT49F002AN-55TU

Product Overview

Category

AT49F002AN-55TU belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 55 nanoseconds.
• Low power consumption.
• Reliable and durable.

Package

AT49F002AN-55TU is available in a standard 32-pin TSOP (Thin Small Outline Package).

Essence

The essence of AT49F002AN-55TU lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

It is typically packaged in reels or tubes, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. A14
29. A13
30. A8
31. A9
32. A11

Functional Features

• Byte-wide random access for efficient data retrieval.
• Fast programming and erasing operations.
• Built-in hardware and software data protection mechanisms.
• Low power consumption in standby mode.
• Automatic sleep mode to conserve energy.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity suitable for various applications.
• Fast access time allows for quick data retrieval.
• Reliable and durable, with a long data retention period.
• Low power consumption helps prolong battery life in portable devices.

Disadvantages

• Limited erase/write cycle endurance compared to other memory technologies.
• Relatively higher cost per bit compared to some alternative memory options.

Working Principles

AT49F002AN-55TU utilizes flash EEPROM technology to store and retrieve data. It employs a combination of floating-gate transistors and charge storage to represent binary information. The memory cells are organized into an array, allowing for byte-level random access. Programming and erasing operations are performed electrically, making it convenient for system integration.

Detailed Application Field Plans

AT49F002AN-55TU finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002NT-55TU
2. AT49F002NT-70TU
3. AT49F002NT-90TU
4. AT49F002NT-12JI
5. AT49F002NT-12PC

These alternative models offer similar functionality and characteristics, providing options for different system requirements.

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