AT49F002N-12TC

Product Overview

Category

AT49F002N-12TC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 120 nanoseconds.
• Low power consumption.
• Reliable and durable.

Package

AT49F002N-12TC is available in a Thin Small Outline Package (TSOP) with 32 pins.

Essence

The essence of AT49F002N-12TC lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

It is typically packaged in reels or tubes, with each containing a specific quantity of AT49F002N-12TC chips.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 120 ns
• Erase/Program Cycle Endurance: 10,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. A15
29. A13
30. A11
31. A8
32. A9

Functional Features

• Byte-wide access for easy integration with various systems.
• Sector erase capability for efficient memory management.
• Built-in hardware and software data protection mechanisms.
• Low power consumption in standby mode.
• Fast programming and erasing operations.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Reliable and durable, suitable for long-term use.
• Low power consumption helps conserve energy.

Disadvantages

• Limited erase/program cycle endurance compared to some other memory technologies.
• Relatively higher cost per bit compared to certain alternatives.
• Requires specific programming and erasing procedures.

Working Principles

AT49F002N-12TC utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into sectors, allowing for efficient management of data. When data needs to be written or erased, specific voltage levels are applied to the appropriate pins, triggering the necessary operations.

Detailed Application Field Plans

AT49F002N-12TC finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Its high storage capacity, fast access time, and reliability make it suitable for storing firmware, configuration data, and other critical information in these systems.

Detailed and Complete Alternative Models

1. AT49F002N-10SI: Similar to AT49F002N-12TC, but with a slightly slower access time of 100 ns.
2. AT49F002NT-90JC: Offers the same features as AT49F002N-12TC but comes in a different package (PLCC) with 32 pins.
3. AT49F002AN-55VI: Provides a higher operating temperature range (-40°C to +125°C) while maintaining similar specifications.

These alternative models offer flexibility in terms of access time, package type, and operating temperature range, allowing users to choose the most suitable option for their specific requirements.

Word count: 570 words