AT49F002N-55PI

Product Overview

Category

AT49F002N-55PI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: 2 megabits (256 kilobytes).
• Fast access time: 55 nanoseconds.
• Low power consumption.
• Reliable and durable.

Package

AT49F002N-55PI is available in a plastic integrated circuit package.

Essence

The essence of AT49F002N-55PI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with a quantity of 1000 units per reel/tube.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 5V
• Access Time: 55 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: 32-lead PDIP

Detailed Pin Configuration

1. A16
2. A15
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Easy integration into existing systems.
• High-speed data transfer.
• Low power consumption.
• Built-in hardware and software protection mechanisms.
• Erase and program operations can be performed on individual bytes or full chip.

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Fast access time allows for quick retrieval of stored information.
• Low power consumption extends battery life in portable devices.
• Robust design ensures reliability and durability.

Disadvantages

• Limited storage capacity compared to other modern memory technologies.
• Erase and program cycles have a finite limit, which may affect the lifespan of the device.
• Relatively higher cost per bit compared to some alternative memory solutions.

Working Principles

AT49F002N-55PI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into an array of rows and columns, with each cell capable of storing one bit of information. Data is written to the memory by applying appropriate voltage levels to specific pins, and it can be read by accessing the desired memory address.

Detailed Application Field Plans

AT49F002N-55PI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. AT49F002N-55JI: Similar specifications, but available in a 32-lead PLCC package.
2. AT49F002N-70PI: Higher access time of 70 ns, otherwise similar specifications and package as AT49F002N-55PI.
3. AT49F002N-90PI: Higher access time of 90 ns, otherwise similar specifications and package as AT49F002N-55PI.

(Note: The above alternative models are provided for reference and may have slight differences in characteristics or availability.)

This concludes the encyclopedia entry for AT49F002N-55PI.