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AT49F002N-70VI
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AT49F002N-70VI

Product Overview

Category

AT49F002N-70VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

  • Non-volatile: Retains data even when power is turned off.
  • High storage capacity: 2 megabits (256 kilobytes).
  • Fast access time: 70 nanoseconds.
  • Low power consumption.
  • Reliable and durable.

Package

AT49F002N-70VI is available in a standard 32-pin plastic DIP (Dual In-line Package).

Essence

The essence of AT49F002N-70VI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

It is typically packaged in tubes or trays, with quantities varying based on customer requirements.

Specifications

  • Memory Type: Flash EEPROM
  • Organization: 256K x 8 bits
  • Supply Voltage: 5V ±10%
  • Operating Temperature Range: -40°C to +85°C
  • Access Time: 70 ns
  • Erase/Program Cycle Endurance: 10,000 cycles
  • Data Retention: 20 years

Detailed Pin Configuration

  1. A16
  2. A14
  3. A12
  4. A7
  5. A6
  6. A5
  7. A4
  8. A3
  9. A2
  10. A1
  11. A0
  12. VPP
  13. WE#
  14. OE#
  15. CE#
  16. BYTE#
  17. NC
  18. DQ0
  19. DQ1
  20. DQ2
  21. DQ3
  22. DQ4
  23. DQ5
  24. DQ6
  25. DQ7
  26. VCC
  27. GND
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC

Functional Features

  • Easy to interface with microcontrollers and other digital systems.
  • Supports both read and write operations.
  • Provides sector erase and chip erase functions.
  • Offers protection against accidental erasure or programming.

Advantages

  • Non-volatile nature ensures data retention even during power loss.
  • High storage capacity allows for storing large amounts of data.
  • Fast access time enables quick retrieval of information.
  • Low power consumption helps in energy-efficient designs.
  • Reliable and durable, suitable for various applications.

Disadvantages

  • Limited endurance with a maximum of 10,000 erase/program cycles.
  • Requires careful handling during programming to avoid accidental data corruption.

Working Principles

AT49F002N-70VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells that can be electrically programmed and erased. The memory cells are organized into sectors, allowing for selective erasure. When data is written, the memory cells are programmed by trapping charges in the floating gate. Reading the stored data involves sensing the presence or absence of charges in the memory cells.

Detailed Application Field Plans

AT49F002N-70VI finds applications in various fields, including: 1. Embedded systems 2. Consumer electronics 3. Automotive electronics 4. Industrial control systems 5. Communication devices

Detailed and Complete Alternative Models

  1. AT49F002N-55VI
  2. AT49F002N-90VI
  3. AT49F002N-12VI
  4. AT49F002N-20VI
  5. AT49F002N-33VI

These alternative models offer similar functionality and characteristics but may differ in terms of access time, temperature range, or package type.

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技術ソリューションにおける AT49F002N-70VI の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of AT49F002N-70VI in technical solutions:

  1. Q: What is the AT49F002N-70VI? A: The AT49F002N-70VI is a 2-megabit (256K x 8) CMOS flash memory chip manufactured by Atmel.

  2. Q: What are the key features of the AT49F002N-70VI? A: Some key features include a 70ns access time, low power consumption, byte-wide data access, and compatibility with various microcontrollers.

  3. Q: How can I interface the AT49F002N-70VI with a microcontroller? A: The AT49F002N-70VI uses a standard parallel interface, making it compatible with most microcontrollers. You can connect it using address, data, and control lines.

  4. Q: What voltage does the AT49F002N-70VI operate at? A: The AT49F002N-70VI operates at a voltage range of 4.5V to 5.5V.

  5. Q: Can I use the AT49F002N-70VI as a program memory for my microcontroller? A: Yes, the AT49F002N-70VI can be used as a program memory for microcontrollers that support external flash memory.

  6. Q: How much data can the AT49F002N-70VI store? A: The AT49F002N-70VI has a capacity of 2 megabits, which is equivalent to 256 kilobytes.

  7. Q: Is the AT49F002N-70VI suitable for high-speed applications? A: Yes, the AT49F002N-70VI has a fast access time of 70ns, making it suitable for high-speed applications.

  8. Q: Can I erase and reprogram the AT49F002N-70VI multiple times? A: Yes, the AT49F002N-70VI supports both erasing and reprogramming, allowing you to update the data stored in the memory chip.

  9. Q: What is the typical lifespan of the AT49F002N-70VI? A: The AT49F002N-70VI has a typical endurance of 100,000 erase/write cycles, ensuring reliable performance over an extended period.

  10. Q: Are there any specific precautions I should take when using the AT49F002N-70VI? A: It is important to handle the AT49F002N-70VI with proper electrostatic discharge (ESD) precautions to prevent damage. Additionally, follow the manufacturer's guidelines for voltage levels and timing requirements during programming and erasing operations.

Please note that these answers are general and may vary depending on the specific application and requirements.