AT49F002T-12VI

Product Overview

Category

AT49F002T-12VI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: The AT49F002T-12VI has a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: It operates at a speed of 120 nanoseconds, allowing for quick data retrieval.
• Low power consumption: Designed to minimize power usage, making it suitable for battery-powered devices.

Package

The AT49F002T-12VI is available in a 32-pin TSOP (Thin Small Outline Package) form factor.

Essence

The essence of AT49F002T-12VI lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AT49F002T-12VI chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 256K x 8 bits
• Supply Voltage: 4.5V - 5.5V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49F002T-12VI features a 32-pin TSOP package with the following pin configuration:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. WE#
11. OE#
12. CE#
13. NC
14. I/O0
15. I/O1
16. I/O2
17. I/O3
18. I/O4
19. I/O5
20. I/O6
21. I/O7
22. GND
23. RP#
24. BYTE#
25. RESET#
26. VPP
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Byte-wide and word-wide access modes for flexible data transfer.
• Sector erase capability allows selective erasure of specific memory regions.
• Built-in hardware and software protection mechanisms to prevent accidental data modification.
• High-speed programming and erase operations for efficient data management.

Advantages and Disadvantages

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High storage capacity suitable for a wide range of applications.
• Fast access time enables quick retrieval of stored information.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited endurance due to erase/program cycle limitations.
• Relatively higher cost compared to other non-volatile memory options.
• Susceptible to physical damage from electrostatic discharge (ESD).

Working Principles

The AT49F002T-12VI utilizes flash EEPROM technology to store data. It consists of a grid of memory cells, each capable of holding one bit of information. These cells are organized into sectors, allowing for selective erasure and programming. The device operates by applying appropriate voltage levels to the control pins, enabling read, write, and erase operations.

Detailed Application Field Plans

The AT49F002T-12VI finds application in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

Some alternative models to AT49F002T-12VI that offer similar functionality include: - AT45DB021D: 2 megabit flash memory with SPI interface. - SST39SF020A: 2 megabit flash memory with parallel interface. - W25Q16JV: 2 megabit flash memory with Quad-SPI interface.

These alternative models provide comparable storage capacity and features, catering to different system requirements.

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