AT49LV001T-90JC

Product Overview

Category

AT49LV001T-90JC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49LV001T-90JC has a storage capacity of 1 megabit (128 kilobytes).
• Fast access time: It operates at a maximum access time of 90 nanoseconds.
• Low power consumption: The device is designed to minimize power usage during operation.
• Wide temperature range: It can operate reliably in temperatures ranging from -40°C to +85°C.

Package

The AT49LV001T-90JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

This product is an essential component in various electronic devices, enabling them to store and retrieve data reliably.

Packaging/Quantity

The AT49LV001T-90JC is typically packaged in reels or tubes, with a quantity of 1000 units per package.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Current: 30 mA (typical)
• Standby Current: 100 μA (typical)
• Input/Output Voltage Levels: TTL-compatible
• Data Retention: 20 years (minimum)

Detailed Pin Configuration

The AT49LV001T-90JC has a total of 32 pins. The pin configuration is as follows:

1. A16
2. A14
3. A12
4. A7
5. A6
6. A5
7. A4
8. A3
9. A2
10. A1
11. A0
12. VCC
13. OE#
14. CE#
15. WE#
16. I/O0
17. I/O1
18. I/O2
19. I/O3
20. I/O4
21. I/O5
22. I/O6
23. I/O7
24. RY/BY#
25. RESET#
26. NC
27. GND
28. A8
29. A9
30. A11
31. A13
32. A15

Functional Features

• Easy interface: The AT49LV001T-90JC uses a simple control and address bus interface, making it easy to integrate into various systems.
• High-speed operation: With a maximum access time of 90 nanoseconds, this device allows for fast read and write operations.
• Sector erase capability: It supports sector erase operations, allowing specific portions of the memory to be erased without affecting other data.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for storing large amounts of data.
• Fast access time enables quick data retrieval.
• Low power consumption helps conserve energy in electronic systems.
• Wide temperature range allows for reliable operation in various environments.

Disadvantages

• Limited storage capacity compared to newer memory technologies.
• Slower access times compared to some modern memory devices.
• Requires additional circuitry for programming and erasing operations.

Working Principles

The AT49LV001T-90JC is based on Flash EEPROM (Electrically Erasable Programmable Read-Only Memory) technology. It utilizes a grid of floating-gate transistors to store digital information. Data can be written to and read from the memory cells by applying appropriate voltage levels to the control and address lines.

Detailed Application Field Plans

The AT49LV001T-90JC is widely used in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive applications - Industrial equipment - Communication devices

Its ability to retain data without power makes it suitable for applications where non-volatile storage is required.

Detailed and Complete Alternative Models

Some alternative models to the AT49LV001T-90JC include: - AT49LV002T-90JC: 2 megabit Flash EEPROM with similar specifications. - AT49LV004T-90JC: 4 megabit Flash EEPROM with similar specifications. - AT49LV008T-90JC: 8 megabit Flash EEPROM with similar specifications.

These alternative models offer higher storage capacities while maintaining compatibility with the AT49LV001T-90JC in terms of pin configuration and functionality.

In conclusion, the AT49LV001T-90JC is a non-volatile memory device that provides reliable data storage and retrieval capabilities. With its high capacity, fast access time,