AT49LV1024-70VC

Product Overview

Category

AT49LV1024-70VC belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The AT49LV1024-70VC has a storage capacity of 1,024 kilobits (128 kilobytes).
• Fast access time: It offers a fast access time of 70 nanoseconds.
• Low power consumption: The device operates at low power levels, making it suitable for battery-powered applications.

Package

The AT49LV1024-70VC is available in a 32-pin TSOP (Thin Small Outline Package) form factor.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The AT49LV1024-70VC is typically packaged in reels or tubes, with each package containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash EEPROM
• Organization: 128K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 20 years
• Erase/Write Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49LV1024-70VC features a total of 32 pins, which are assigned specific functions. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. CE (Chip Enable)
11. OE (Output Enable)
12. WE (Write Enable)
13. NC (No Connect)
14. DQ0 (Data Input/Output 0)
15. DQ1 (Data Input/Output 1)
16. DQ2 (Data Input/Output 2)
17. DQ3 (Data Input/Output 3)
18. DQ4 (Data Input/Output 4)
19. DQ5 (Data Input/Output 5)
20. DQ6 (Data Input/Output 6)
21. DQ7 (Data Input/Output 7)
22. VCC (Power Supply)
23. RP (Reset/Block Protect)
24. WP (Write Protect)
25. NC (No Connect)
26. NC (No Connect)
27. NC (No Connect)
28. NC (No Connect)
29. NC (No Connect)
30. NC (No Connect)
31. NC (No Connect)
32. NC (No Connect)

Functional Features

• Byte-wide operations: The AT49LV1024-70VC supports byte-level read and write operations, allowing for efficient data manipulation.
• Sector erase capability: It provides the ability to erase specific sectors of memory, enabling selective data modification.
• Hardware and software protection: The device offers various protection mechanisms to prevent unauthorized access or accidental modification of stored data.
• Fast programming speed: The AT49LV1024-70VC allows for quick programming of data, reducing overall system latency.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity for accommodating large amounts of data.
• Low power consumption extends battery life in portable devices.
• Fast access time enables quick retrieval of information.
• Sector erase capability allows for efficient data management.

Disadvantages

• Limited endurance of erase/write cycles may affect the lifespan of the device.
• Relatively higher cost compared to other memory technologies.
• Susceptible to physical damage, such as electrostatic discharge (ESD).

Working Principles

The AT49LV1024-70VC utilizes flash EEPROM technology to store and retrieve digital information. It consists of a grid of memory cells, with each cell capable of storing one bit of data. The data is stored by trapping electric charges within the floating gate of each memory cell. These trapped charges represent the binary states of 0 or 1.

To write data, a high voltage is applied to the control gate, allowing electrons to tunnel through the insulating layer and into the floating gate. This process alters the charge distribution within the floating gate, effectively changing the stored data.

Reading data involves applying appropriate voltages to the control gate and accessing the resulting current flow through the memory cell. The magnitude of the current indicates the stored data state, which can be interpreted as either a logic 0 or logic 1.

Detailed Application Field Plans