SST39LF010-45-4C-MME

Product Overview

Category

The SST39LF010-45-4C-MME belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and other digital devices.

Characteristics

• Non-volatile memory: The SST39LF010-45-4C-MME retains stored data even when power is turned off.
• High storage capacity: This flash memory chip has a capacity of 1 megabit (128 kilobytes).
• Fast read and write speeds: The SST39LF010-45-4C-MME offers high-speed data transfer, allowing for efficient data access and retrieval.
• Low power consumption: It is designed to consume minimal power during operation, making it suitable for battery-powered devices.
• Durable and reliable: This flash memory chip is resistant to shock, vibration, and extreme temperatures, ensuring data integrity and longevity.
• Easy integration: The SST39LF010-45-4C-MME can be easily integrated into various electronic systems due to its compact size and standardized interface.

Package

The SST39LF010-45-4C-MME is available in a small form factor package, commonly known as a surface-mount device (SMD). This package type ensures easy installation and compatibility with modern circuit board designs.

Essence

The essence of the SST39LF010-45-4C-MME lies in its ability to provide reliable and high-capacity data storage in a compact and energy-efficient form.

Packaging/Quantity

The SST39LF010-45-4C-MME is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for mass production.

Specifications

• Manufacturer: SST (Silicon Storage Technology)
• Model: SST39LF010-45-4C-MME
• Memory Type: Flash memory
• Capacity: 1 megabit (128 kilobytes)
• Operating Voltage: 2.7V - 3.6V
• Interface: SPI (Serial Peripheral Interface)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: 100,000 write cycles

Detailed Pin Configuration

The SST39LF010-45-4C-MME follows a standard pin configuration for flash memory chips. The pinout diagram is as follows:

┌───────────────┐ │ │ │ SST39 │ │ │ │ │ └───────────────┘

Pin Description: 1. VCC: Power supply voltage 2. GND: Ground reference 3. HOLD: Hold input for suspending data transfer 4. WP: Write protect input for preventing data modification 5. SCK: Serial clock input for synchronous communication 6. SI: Serial data input for sending commands and data 7. SO: Serial data output for receiving data 8. CS: Chip select input for device activation

Functional Features

1. High-speed Read/Write Operations: The SST39LF010-45-4C-MME offers fast read and write speeds, enabling quick access to stored data.
2. Sector Erase Capability: This flash memory chip supports sector erase operations, allowing selective erasure of specific memory blocks.
3. Software/Hardware Protection: The SST39LF010-45-4C-MME provides write protection features that can be controlled through software or hardware methods.
4. Low Power Consumption: Designed with power efficiency in mind, this flash memory chip minimizes power consumption during operation, extending battery life in portable devices.
5. Reliable Data Retention: The SST39LF010-45-4C-MME ensures data integrity and long-term retention, making it suitable for critical applications.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Durable and reliable
• Easy integration into electronic systems
• Sector erase capability for selective data erasure
• Software/hardware protection features

Disadvantages

• Limited capacity compared to higher-end flash memory chips
• Relatively slower compared to newer generations of flash memory

Working Principles

The SST39LF010-45-4C-MME utilizes the principles of flash memory technology. It consists of a grid of memory cells that store data as electrical charges. These charges are trapped within floating gate transistors, allowing them to retain their state even when power is removed. To read or write data, the flash memory chip uses a combination of voltage levels and control signals to manipulate the charge levels within the memory cells.

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