SST39LF020-55-4I-NHE

Product Overview

Category

The SST39LF020-55-4I-NHE belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The SST39LF020-55-4I-NHE retains stored data even when power is removed.
• High capacity: This device offers a storage capacity of 2 megabits (256 kilobytes).
• Fast access time: The SST39LF020-55-4I-NHE provides quick access to stored data with a read access time of 55 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Wide operating voltage range: This device can operate within a voltage range of 2.7V to 3.6V.

Package

The SST39LF020-55-4I-NHE comes in a compact and durable package, ensuring protection against environmental factors and physical damage.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The SST39LF020-55-4I-NHE is typically packaged in trays or reels, with each package containing a specific quantity of devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 Megabits (256 Kilobytes)
• Operating Voltage Range: 2.7V to 3.6V
• Read Access Time: 55 Nanoseconds
• Package Type: DIP (Dual In-line Package)
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The SST39LF020-55-4I-NHE has a total of 32 pins, which are configured as follows:

1. VCC - Power Supply
2. A0-A16 - Address Inputs
3. DQ0-DQ7 - Data Inputs/Outputs
4. CE# - Chip Enable
5. OE# - Output Enable
6. WE# - Write Enable
7. RESET# - Reset
8. WP# - Write Protect
9. RP# - Ready/Busy
10. VSS - Ground

Functional Features

• High-speed data transfer: The SST39LF020-55-4I-NHE supports fast read and write operations, enabling efficient data transfer.
• Sector erase capability: This device allows for the erasure of specific sectors, providing flexibility in managing stored data.
• Built-in write protection: The SST39LF020-55-4I-NHE includes a write protect feature to prevent accidental modification or deletion of stored data.
• Reliable data retention: With its non-volatile nature, this product ensures long-term data retention even in the absence of power.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Low power consumption
• Wide operating voltage range
• Compact and durable package

Disadvantages

• Limited temperature range (-40°C to +85°C)
• Requires external components for proper operation

Working Principles

The SST39LF020-55-4I-NHE utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge storage mechanisms to achieve non-volatile data storage. When data is written, charges are trapped within the floating gate, representing the stored information. During read operations, the charges are sensed to determine the stored data.

Detailed Application Field Plans

The SST39LF020-55-4I-NHE finds applications in various fields, including:

1. Microcontrollers: This product is commonly used as a storage medium for microcontrollers, allowing them to retain program code and data even when powered off.
2. Embedded Systems: The SST39LF020-55-4I-NHE provides reliable storage for critical data in embedded systems, ensuring data integrity and system stability.
3. Consumer Electronics: It is utilized in consumer electronic devices such as digital cameras, MP3 players, and smartwatches to store user data and firmware.

Detailed and Complete Alternative Models

1. SST39VF010-70-4C-WH: Similar to the SST39LF020-55-4I-NHE, this model offers a 1-megabit storage capacity with a faster access time of 70 nanoseconds.
2. AT25SF041-SSHD-T: This alternative model provides a higher storage capacity of 4 megabits (512 kilobytes) and operates at a wider temperature range (-40°C to +105°C).

Please note that the above alternative models are just a few examples, and there are