SST39SF040-45-4C-NHE-T

Product Overview

Category

The SST39SF040-45-4C-NHE-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The SST39SF040-45-4C-NHE-T retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: The device provides a fast access time of 45 nanoseconds.
• Low power consumption: The SST39SF040-45-4C-NHE-T operates at low power levels, making it suitable for battery-powered devices.

Package

The SST39SF040-45-4C-NHE-T is available in a compact surface-mount package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The SST39SF040-45-4C-NHE-T is typically packaged in reels or trays, with a quantity of 250 units per reel/tray.

Specifications

• Memory Capacity: 4 Megabits (512 Kilobytes)
• Access Time: 45 Nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount

Detailed Pin Configuration

The SST39SF040-45-4C-NHE-T has a total of 32 pins, which are configured as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. CE - Chip enable
5. OE - Output enable
6. WE - Write enable
7. RP - Reset/Program
8. WP - Write protect
9. RY/BY# - Ready/Busy output
10. VSS - Ground

Functional Features

• Fast Read and Write Operations: The SST39SF040-45-4C-NHE-T offers high-speed read and write operations, allowing for efficient data transfer.
• Sector Erase Capability: This product supports sector erase operations, enabling selective erasure of specific memory sectors.
• Hardware Data Protection: The device incorporates hardware protection mechanisms to prevent accidental data corruption during power fluctuations or system failures.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even in the absence of power.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval of information.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited storage capacity compared to other non-volatile memory options.
• Requires careful handling to avoid static discharge and damage.

Working Principles

The SST39SF040-45-4C-NHE-T utilizes flash memory technology to store data. It employs a grid of memory cells that can be electrically programmed and erased. When data is written, charges are trapped within the memory cells, representing the stored information. During read operations, these charges are detected and converted back into usable data.

Detailed Application Field Plans

The SST39SF040-45-4C-NHE-T finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. SST39VF080-70-4C-NHE: 8 Megabit (1 Megabyte) capacity, 70 nanoseconds access time.
2. SST39SF020A-70-4C-NHE: 2 Megabit (256 Kilobytes) capacity, 70 nanoseconds access time.
3. SST39VF1601-70-4C-EKE: 16 Megabit (2 Megabyte) capacity, 70 nanoseconds access time.

These alternative models offer different capacities and access times to cater to specific application requirements.

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