SST39SF040-45-4I-NHE-T

Product Overview

Category

The SST39SF040-45-4I-NHE-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The SST39SF040-45-4I-NHE-T retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: The device provides a fast access time of 45 nanoseconds.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.

Package

The SST39SF040-45-4I-NHE-T is available in a compact surface-mount package.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The SST39SF040-45-4I-NHE-T is typically packaged in reels or tubes, with a quantity of 250 units per reel/tube.

Specifications

• Memory Type: Flash
• Organization: 512K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 45 ns
• Erase/Program Cycle Endurance: 100,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The SST39SF040-45-4I-NHE-T has a total of 32 pins. Here is the detailed pin configuration:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RP# - Reset/Program
8. WP# - Write protect
9. RY/BY# - Ready/busy status output

Functional Features

• Easy integration: The SST39SF040-45-4I-NHE-T can be easily integrated into existing electronic systems.
• High-speed operation: It offers fast read and write operations, enabling efficient data transfer.
• Reliable performance: The device ensures reliable data storage and retrieval, even in harsh environments.
• Flexible interface: The parallel interface allows for easy communication with other system components.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention without power supply.
• High capacity allows for storing large amounts of data.
• Fast access time enables quick data retrieval.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited erase/program cycle endurance compared to some other memory technologies.
• Higher cost per bit compared to certain alternative memory options.

Working Principles

The SST39SF040-45-4I-NHE-T utilizes flash memory technology to store data. It employs a combination of floating-gate transistors and charge trapping mechanisms to retain information even when power is removed. The device uses electrical signals to program and erase memory cells, allowing for data modification as needed.

Detailed Application Field Plans

The SST39SF040-45-4I-NHE-T finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices

Detailed and Complete Alternative Models

1. SST39VF040-70-4C-NH - Similar to the SST39SF040-45-4I-NHE-T, but with a faster access time of 70 ns.
2. SST39SF020A-70-4C-NH - A lower capacity alternative with 2 megabits (256 kilobytes) and a faster access time of 70 ns.
3. SST39VF080-70-4C-EKE - A higher capacity option with 8 megabits (1 megabyte) and a faster access time of 70 ns.

These alternative models offer different specifications to cater to specific application requirements.

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