SST39VF200A-70-4C-M1QE-T

Basic Information Overview

Category: Integrated Circuit (IC)

Use: The SST39VF200A-70-4C-M1QE-T is a flash memory IC used for data storage in various electronic devices.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Reliable data retention - Easy integration into existing systems

Package: The SST39VF200A-70-4C-M1QE-T is available in a surface mount 48-pin TSOP package.

Essence: This flash memory IC is designed to provide non-volatile storage capabilities for electronic devices, allowing them to retain data even when powered off.

Packaging/Quantity: The SST39VF200A-70-4C-M1QE-T is typically sold in reels containing multiple units. The exact quantity depends on the supplier and customer requirements.

Specifications

• Operating Voltage: 2.7V - 3.6V
• Memory Size: 2 Megabits (256 Kilobytes)
• Access Time: 70 nanoseconds
• Temperature Range: -40°C to +85°C
• Interface: Parallel
• Organization: 256K x 8 bits
• Erase/Program Suspend & Resume Support
• Sector Erase Architecture:
  • Uniform 4 KByte sectors
  • Uniform 32 KByte overlay blocks
• Endurance: 100,000 erase/write cycles
• Data Retention: 20 years

Detailed Pin Configuration

The SST39VF200A-70-4C-M1QE-T has a total of 48 pins. Here is a detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. VCC - Power Supply
21. DQ0 - Data Input/Output
22. DQ1 - Data Input/Output
23. DQ2 - Data Input/Output
24. DQ3 - Data Input/Output
25. DQ4 - Data Input/Output
26. DQ5 - Data Input/Output
27. DQ6 - Data Input/Output
28. DQ7 - Data Input/Output
29. WE# - Write Enable
30. CE# - Chip Enable
31. OE# - Output Enable
32. RP# - Reset/Protection
33. BYTE# - Byte/Word Organization Select
34. VSS - Ground
35. NC - No Connection
36. NC - No Connection
37. NC - No Connection
38. NC - No Connection
39. NC - No Connection
40. NC - No Connection
41. NC - No Connection
42. NC - No Connection
43. NC - No Connection
44. NC - No Connection
45. NC - No Connection
46. NC - No Connection
47. NC - No Connection
48. NC - No Connection

Functional Features

• High-speed operation allows for fast data access and transfer.
• Low power consumption ensures efficient use of energy in portable devices.
• Large storage capacity provides ample space for data storage needs.
• Reliable data retention ensures that stored information remains intact over extended periods.
• Easy integration into existing systems simplifies the design and implementation process.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access. - Low power consumption prolongs battery life in portable devices. - Large storage capacity accommodates extensive data storage requirements. - Reliable data retention ensures data integrity. - Easy integration simplifies system design and implementation.

Disadvantages: - Limited compatibility with certain legacy systems that may require different interfaces. - Higher cost compared to lower-capacity flash memory options. - Limited endurance compared to other non-volatile memory technologies.

Working Principles

The SST39VF200A-70-4C-M1QE-T utilizes a floating gate transistor structure to store data. When programming, an electrical charge is applied to the floating gate, trapping electrons and altering the transistor's characteristics. This change represents a binary value (0 or 1). Erasing the memory involves removing