SST39VF512-70-4C-NHE-T

Product Overview

Category

The SST39VF512-70-4C-NHE-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The SST39VF512-70-4C-NHE-T retains stored data even when power is removed.
• High capacity: It has a storage capacity of 512 megabits (64 megabytes).
• Fast operation: The device operates at a speed of 70 nanoseconds.
• Low power consumption: It is designed to consume minimal power during operation.
• Wide temperature range: The SST39VF512-70-4C-NHE-T can operate reliably in temperatures ranging from -40°C to 85°C.

Package

The SST39VF512-70-4C-NHE-T is available in a compact surface-mount package, which ensures easy integration into circuit boards.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

The SST39VF512-70-4C-NHE-T is typically packaged in reels or trays, with each reel or tray containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 512 megabits (64 megabytes)
• Access Time: 70 nanoseconds
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to 85°C
• Interface: Parallel
• Package Type: Surface Mount

Detailed Pin Configuration

The SST39VF512-70-4C-NHE-T has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. DQ0
26. DQ1
27. DQ2
28. DQ3
29. DQ4
30. DQ5
31. DQ6
32. DQ7
33. DQ8
34. DQ9
35. DQ10
36. DQ11
37. DQ12
38. DQ13
39. DQ14
40. DQ15
41. WE#
42. CE#
43. OE#
44. RESET#
45. WP#
46. RY/BY#
47. NC
48. VSS

Functional Features

• Fast Read and Write Operations: The SST39VF512-70-4C-NHE-T offers high-speed read and write operations, allowing for efficient data access.
• Sector Erase Capability: It supports sector erase operations, enabling selective erasure of specific memory sectors.
• Embedded Algorithms: The device incorporates various algorithms to ensure reliable programming and erasing of data.
• Protection Mechanisms: The SST39VF512-70-4C-NHE-T includes built-in protection mechanisms to prevent accidental data corruption or loss.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast operation speed
• Low power consumption
• Wide temperature range for reliable operation
• Compact surface-mount package for easy integration

Disadvantages

• Limited compatibility with certain older systems that do not support parallel interfaces
• Relatively higher cost compared to some alternative models

Working Principles

The SST39VF512-70-4C-NHE-T utilizes flash memory technology to store and retrieve data. It employs a parallel interface for communication with the host device. The device operates by applying appropriate voltage levels to the pins, allowing for read, write, and erase operations.

Detailed Application Field Plans

The SST39VF512-70-4C-NHE-T finds applications in various fields, including: 1. Computer Systems: Used as primary or secondary storage in desktops, laptops, and servers. 2. Consumer Electronics: Integrated into smartphones, tablets, digital cameras, and gaming consoles for data storage. 3. Automotive Electronics: Employed in automotive systems for storing firmware, configuration data, and logging information. 4. Industrial Control Systems: Utilized in industrial automation, robotics, and control systems