SST39VF512-70-4I-WHE

Product Overview

Category

The SST39VF512-70-4I-WHE belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The SST39VF512-70-4I-WHE retains stored data even when power is removed.
• High capacity: With a capacity of 512 megabits (64 megabytes), it offers ample storage space.
• Fast access time: The device has a low access time of 70 nanoseconds, ensuring quick retrieval of data.
• Wide operating voltage range: It can operate within a voltage range of 2.7V to 3.6V, making it compatible with different systems.
• Industrial-grade: The -4I-WHE variant is designed to withstand harsh industrial environments.

Package and Quantity

The SST39VF512-70-4I-WHE is available in a small form factor package, commonly known as TSOP (Thin Small Outline Package). It comes in a quantity of one unit per package.

Specifications

• Memory Capacity: 512 megabits (64 megabytes)
• Access Time: 70 nanoseconds
• Operating Voltage Range: 2.7V to 3.6V
• Temperature Range: -40°C to +85°C
• Package Type: TSOP
• Package Dimensions: 12mm x 20mm x 1.2mm

Detailed Pin Configuration

The SST39VF512-70-4I-WHE has a total of 48 pins. Here is a detailed pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#/ACC: Reset/acceleration function
8. RY/BY#: Ready/busy status output
9. WP#/ACC: Write protect/acceleration function
10. VSS: Ground

Functional Features

• Fast Read and Write Operations: The SST39VF512-70-4I-WHE offers high-speed read and write operations, allowing for efficient data transfer.
• Sector Erase Capability: It supports sector erase operations, enabling selective erasure of specific memory sectors.
• Software and Hardware Protection: The device provides protection mechanisms to prevent unauthorized access or modification of stored data.
• Low Power Consumption: The SST39VF512-70-4I-WHE is designed to minimize power consumption, making it suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Wide operating voltage range
• Industrial-grade durability
• Sector erase capability

Disadvantages

• Relatively small package size
• Limited temperature range

Working Principles

The SST39VF512-70-4I-WHE utilizes Flash memory technology for data storage. It employs a combination of floating gate transistors and charge trapping to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. These charges can be later read by applying appropriate voltages to the memory cells.

Detailed Application Field Plans

The SST39VF512-70-4I-WHE finds applications in various fields, including: 1. Computer systems 2. Mobile devices 3. Automotive electronics 4. Industrial control systems 5. Medical equipment

Alternative Models

Here are some alternative models that offer similar functionality: 1. SST39VF256C-70-4I-WHE 2. AT49BV512-70TU 3. M29W512G70N6E

These models can be considered as alternatives to the SST39VF512-70-4I-WHE, depending on specific requirements and compatibility.

In conclusion, the SST39VF512-70-4I-WHE is a non-volatile memory device with high capacity, fast access time, and wide operating voltage range. It finds applications in various electronic systems and offers advantages such as sector erase capability and industrial-grade durability. However, it has limitations in terms of package size and temperature range. Alternative models are available for consideration based on specific needs.