SST39VF512-70-4I-WHE-T

Product Overview

Category

The SST39VF512-70-4I-WHE-T belongs to the category of non-volatile memory devices.

Use

This product is commonly used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The data stored in this memory device is retained even when power is removed.
• High capacity: The SST39VF512-70-4I-WHE-T has a storage capacity of 512 kilobits.
• Fast access time: With a speed of 70 nanoseconds, it allows for quick data retrieval.
• Wide operating voltage range: This device can operate within a voltage range of 2.7V to 3.6V.

Package

The SST39VF512-70-4I-WHE-T is available in a small form factor package, which makes it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The SST39VF512-70-4I-WHE-T is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Memory Type: Flash
• Organization: 64K x 8 bits
• Operating Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Temperature Range: -40°C to +85°C
• Package Type: TSOP
• Pin Count: 32

Detailed Pin Configuration

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VSS (Ground)
10. DQ0
11. DQ1
12. DQ2
13. DQ3
14. DQ4
15. DQ5
16. DQ6
17. DQ7
18. WE# (Write Enable)
19. CE# (Chip Enable)
20. OE# (Output Enable)
21. RP# (Reset/Block Protect)
22. VCC (Power Supply)
23. NC (No Connection)
24. NC (No Connection)
25. NC (No Connection)
26. NC (No Connection)
27. NC (No Connection)
28. NC (No Connection)
29. NC (No Connection)
30. NC (No Connection)
31. NC (No Connection)
32. NC (No Connection)

Functional Features

• Block Erase: The SST39VF512-70-4I-WHE-T supports block erase operations, allowing for efficient erasure of large sections of memory.
• Byte Programming: Individual bytes can be programmed in this memory device, providing flexibility in data storage.
• Sector Lockdown: Certain sectors of the memory can be locked to prevent accidental modification or erasure.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High capacity allows for storing a large amount of data.
• Fast access time enables quick retrieval of information.
• Wide operating voltage range provides compatibility with various systems.

Disadvantages

• Limited endurance: Flash memory has a finite number of write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The SST39VF512-70-4I-WHE-T utilizes flash memory technology to store data. It consists of floating-gate transistors that can trap electrical charges, representing binary values. These charges can be read, programmed, or erased using specific voltage levels and control signals.

During programming, a high voltage is applied to the gate of the selected transistor, allowing electrons to tunnel through the insulating layer and become trapped in the floating gate. Erasing is achieved by applying a higher voltage that removes the trapped charges.

Detailed Application Field Plans

The SST39VF512-70-4I-WHE-T finds applications in various electronic systems, including: 1. Embedded systems 2. Consumer electronics 3. Automotive electronics 4. Industrial control systems 5. Communication devices

Detailed and Complete Alternative Models

1. SST39VF010-70-4C-WH: 1 Megabit Flash Memory, 70 ns Access Time, TSOP package.
2. SST39SF040-70-4C-NHE: 4 Megabit Flash Memory, 70 ns Access Time, PLCC package.
3. SST39VF800A-70-4C-EKE: 8 Megabit Flash Memory, 70 ns Access Time, TSSOP package.
4. SST39VF1601-70-4C-BKE: