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MT29E512G08CEHBBJ4-3:B

MT29E512G08CEHBBJ4-3:B

Basic Information Overview

  • Category: Memory Storage Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity
    • Fast data transfer rate
  • Package: BGA (Ball Grid Array)
  • Essence: Flash memory chip
  • Packaging/Quantity: Single chip

Specifications

  • Model: MT29E512G08CEHBBJ4-3:B
  • Capacity: 512 GB
  • Interface: SATA III
  • Form Factor: 2.5-inch
  • Read Speed: Up to 550 MB/s
  • Write Speed: Up to 520 MB/s
  • NAND Flash Type: TLC (Triple-Level Cell)
  • Operating Voltage: 5V ± 10%
  • Operating Temperature: 0°C to 70°C
  • Shock Resistance: 1500G, duration 0.5ms, half sine wave
  • MTBF (Mean Time Between Failures): 1.5 million hours

Detailed Pin Configuration

The MT29E512G08CEHBBJ4-3:B flash memory chip has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | R/B# | Ready/Busy status | | 5 | WE# | Write Enable | | 6 | RE# | Read Enable | | 7-14 | A0-A7 | Address inputs | | 15-22 | DQ0-DQ7 | Data inputs/outputs | | 23-25 | NC | No Connection | | 26 | WP# | Write Protect | | 27 | RST# | Reset | | 28 | VCCQ | Power supply voltage for I/O |

Functional Features

  • High-speed data transfer
  • Large storage capacity
  • Low power consumption
  • Reliable and durable
  • Error correction and wear-leveling algorithms
  • S.M.A.R.T. (Self-Monitoring, Analysis, and Reporting Technology) support

Advantages

  • Fast read and write speeds enhance overall system performance
  • High storage capacity allows for storing large amounts of data
  • Low power consumption prolongs battery life in portable devices
  • Robust design ensures data integrity and reliability
  • Advanced error correction and wear-leveling algorithms improve longevity
  • S.M.A.R.T. support enables monitoring and early detection of potential issues

Disadvantages

  • Relatively higher cost compared to traditional hard drives
  • Limited write endurance compared to other types of memory
  • Susceptible to data loss in case of power failure during write operations

Working Principles

The MT29E512G08CEHBBJ4-3:B flash memory chip utilizes NAND flash technology to store data. It consists of multiple memory cells organized into pages and blocks. Each cell can store multiple bits of information using different voltage levels. When data is written, the charge level in the cells is adjusted to represent the desired information. During read operations, the charge levels are measured to retrieve the stored data.

Detailed Application Field Plans

The MT29E512G08CEHBBJ4-3:B flash memory chip finds applications in various fields, including: 1. Consumer Electronics: Used in smartphones, tablets, digital cameras, and portable media players for data storage. 2. Computer Systems: Utilized as primary or secondary storage in laptops, desktops, and servers to enhance performance and increase storage capacity. 3. Automotive: Integrated into infotainment systems, navigation devices, and advanced driver-assistance systems (ADAS) for data storage and retrieval. 4. Industrial Automation: Employed in industrial control systems, robotics, and IoT devices for storing critical data and firmware.

Detailed and Complete Alternative Models

  1. MT29E512G08CEHBBJ4-3:B - 512 GB, SATA III, 2.5-inch form factor
  2. MT29E256G08CEHBBJ4-3:B - 256 GB, SATA III, 2.5-inch form factor
  3. MT29E1T08E8CJBBJ4-3:B - 1 TB, SATA III, 2.5-inch form factor
  4. MT29E128G08CEHBBJ4-3:B - 128 GB, SATA III, 2.5-inch form factor

(Note: The above list is not exhaustive and may vary based on specific requirements and availability.)

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技術ソリューションにおける MT29E512G08CEHBBJ4-3:B の適用に関連する 10 件の一般的な質問と回答をリストします。

1. What is the capacity of the MT29E512G08CEHBBJ4-3:B memory module?

The MT29E512G08CEHBBJ4-3:B memory module has a capacity of 512 gigabytes (GB).

2. What is the form factor of the MT29E512G08CEHBBJ4-3:B memory module?

The MT29E512G08CEHBBJ4-3:B memory module follows the standard 288-pin DDR4 SDRAM form factor.

3. What is the speed rating of the MT29E512G08CEHBBJ4-3:B memory module?

The MT29E512G08CEHBBJ4-3:B memory module operates at a speed of 3200 megahertz (MHz).

4. Is the MT29E512G08CEHBBJ4-3:B memory module compatible with my motherboard?

To ensure compatibility, you should check your motherboard's specifications and verify if it supports DDR4 memory modules with a capacity of 512GB and a speed of 3200MHz.

5. Can I use multiple MT29E512G08CEHBBJ4-3:B memory modules together?

Yes, you can use multiple MT29E512G08CEHBBJ4-3:B memory modules together, as long as your motherboard supports the total capacity and speed of the combined modules.

6. What voltage does the MT29E512G08CEHBBJ4-3:B memory module require?

The MT29E512G08CEHBBJ4-3:B memory module operates at a standard voltage of 1.2 volts (V).

7. Does the MT29E512G08CEHBBJ4-3:B memory module support ECC (Error-Correcting Code)?

No, the MT29E512G08CEHBBJ4-3:B memory module does not support ECC. It is a non-ECC memory module.

8. What are the typical applications for the MT29E512G08CEHBBJ4-3:B memory module?

The MT29E512G08CEHBBJ4-3:B memory module is commonly used in high-performance computing systems, servers, workstations, and other demanding applications that require large memory capacities.

9. Is the MT29E512G08CEHBBJ4-3:B memory module compatible with both Intel and AMD processors?

Yes, the MT29E512G08CEHBBJ4-3:B memory module is compatible with both Intel and AMD processors as long as the motherboard supports DDR4 memory.

10. Does the MT29E512G08CEHBBJ4-3:B memory module come with a warranty?

The warranty for the MT29E512G08CEHBBJ4-3:B memory module may vary depending on the manufacturer or vendor. It is recommended to check the specific warranty terms provided by the seller or consult the product documentation for more information.