MT29F128G08AECBBH6-6IT:B

Product Overview

Category

MT29F128G08AECBBH6-6IT:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08AECBBH6-6IT:B offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F128G08AECBBH6-6IT:B is energy-efficient, consuming minimal power during operation, which is beneficial for battery-powered devices.
• Compact package: This NAND flash memory comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F128G08AECBBH6-6IT:B is typically packaged in a surface-mount technology (SMT) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F128G08AECBBH6-6IT:B has a pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of data in large blocks, improving efficiency.
• Random Access: Provides quick access to specific data within the memory array.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and durability.
• Low power consumption is beneficial for battery-powered devices.
• Compact package facilitates integration into small-sized electronic devices.

Disadvantages

• Limited endurance compared to other types of non-volatile memory.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

The MT29F128G08AECBBH6-6IT:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. When data is written, the charge is adjusted to represent the desired information. During read operations, the charge level is measured to retrieve the stored data.

Detailed Application Field Plans

The MT29F128G08AECBBH6-6IT:B is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F128G08AJADAWP-IT: Similar specifications with a different package type.
2. MT29F128G08CBACAWP-IT: Higher endurance and extended temperature range.
3. MT29F128G08CJABAWP-IT: Lower power consumption and faster data transfer rate.

These alternative models offer similar functionality but may have variations in certain features or specifications.

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