Micron Technology Inc.
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MT29F128G08AEEBBH6-12:B TR

MT29F128G08AEEBBH6-12:B TR

Product Overview

Category

MT29F128G08AEEBBH6-12:B TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F128G08AEEBBH6-12:B TR offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
  • Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
  • Reliable performance: The NAND flash memory technology ensures reliable and durable performance, making it suitable for long-term data storage.
  • Compact package: The MT29F128G08AEEBBH6-12:B TR comes in a compact package, making it easy to integrate into various electronic devices.
  • Low power consumption: It consumes minimal power during operation, contributing to energy efficiency.

Packaging/Quantity

The MT29F128G08AEEBBH6-12:B TR is typically packaged in a small form factor, such as a surface-mount device (SMD) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

  • Model: MT29F128G08AEEBBH6-12:B TR
  • Storage Capacity: 128 GB
  • Interface: NAND Flash
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Package Type: Surface-Mount Device (SMD)
  • Data Transfer Rate: Up to 400 megabytes per second (MB/s)

Detailed Pin Configuration

The MT29F128G08AEEBBH6-12:B TR has a specific pin configuration for proper integration into electronic devices. The detailed pin configuration is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground connection
  3. CE: Chip enable
  4. CLE: Command latch enable
  5. ALE: Address latch enable
  6. RE: Read enable
  7. WE: Write enable
  8. R/B: Ready/Busy status
  9. DQ0-DQ7: Data input/output lines

Functional Features

  • Page Program Operation: Allows data to be written in page-sized increments, enhancing efficiency.
  • Block Erase Operation: Enables the erasure of entire blocks of data, facilitating efficient memory management.
  • Read and Write Operations: Provides fast read and write access to stored data.
  • Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
  • Wear-Leveling: Distributes data evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for extensive data storage.
  • Fast data transfer rate enables quick access to stored information.
  • Reliable performance ensures long-term data retention.
  • Compact package facilitates integration into various electronic devices.
  • Low power consumption contributes to energy efficiency.

Disadvantages

  • Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
  • Susceptible to data corruption: Improper handling or power interruptions during write operations can lead to data loss or corruption.

Working Principles

The MT29F128G08AEEBBH6-12:B TR utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell stores data by trapping electric charges within a floating gate. When reading data, the charge level in each cell is measured to determine the stored information. During write operations, charges are added or removed from the floating gate to modify the stored data.

Detailed Application Field Plans

The MT29F128G08AEEBBH6-12:B TR finds applications in various electronic devices that require high-capacity and reliable data storage. Some of the specific application fields include:

  1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
  2. Digital cameras: Enables the storage of high-resolution photos and videos.
  3. Solid-state drives (SSDs): Provides fast and reliable storage for computer systems.
  4. Automotive electronics: Used for data storage in infotainment systems, navigation systems, and advanced driver-assistance systems (ADAS).
  5. Industrial equipment: Utilized for data logging, firmware storage, and system configuration in industrial automation and control systems.

Detailed and Complete Alternative Models

  1. MT29F128G08AJAAAWP-IT
  2. MT29F128G08CFABA-12:A
  3. MT29F128G08CFAAAWP-IT

技術ソリューションにおける MT29F128G08AEEBBH6-12:B TR の適用に関連する 10 件の一般的な質問と回答をリストします。

1. What is the MT29F128G08AEEBBH6-12:B TR?

The MT29F128G08AEEBBH6-12:B TR is a specific model of NAND flash memory chip manufactured by Micron Technology. It has a capacity of 128 gigabits (16 gigabytes) and operates at a speed of 12 nanoseconds.

2. What are the typical applications of the MT29F128G08AEEBBH6-12:B TR?

The MT29F128G08AEEBBH6-12:B TR is commonly used in various technical solutions, including but not limited to embedded systems, solid-state drives (SSDs), industrial automation, automotive electronics, and consumer electronics.

3. What is the voltage requirement for the MT29F128G08AEEBBH6-12:B TR?

The MT29F128G08AEEBBH6-12:B TR operates at a voltage range of 2.7V to 3.6V.

4. What is the interface used by the MT29F128G08AEEBBH6-12:B TR?

The MT29F128G08AEEBBH6-12:B TR uses a standard 8-bit parallel interface for data transfer.

5. Does the MT29F128G08AEEBBH6-12:B TR support wear-leveling algorithms?

Yes, the MT29F128G08AEEBBH6-12:B TR supports built-in wear-leveling algorithms, which help distribute write operations evenly across the memory cells to extend the lifespan of the NAND flash memory.

6. What is the endurance rating of the MT29F128G08AEEBBH6-12:B TR?

The MT29F128G08AEEBBH6-12:B TR has an endurance rating of 3,000 program/erase cycles per block.

7. Can the MT29F128G08AEEBBH6-12:B TR operate in extreme temperatures?

Yes, the MT29F128G08AEEBBH6-12:B TR is designed to operate reliably in a wide temperature range, typically from -40°C to +85°C.

8. Does the MT29F128G08AEEBBH6-12:B TR support hardware data protection features?

Yes, the MT29F128G08AEEBBH6-12:B TR supports various hardware data protection features, including error correction codes (ECC), bad block management, and power loss protection.

9. What is the package type of the MT29F128G08AEEBBH6-12:B TR?

The MT29F128G08AEEBBH6-12:B TR comes in a standard TSOP (Thin Small Outline Package) form factor.

10. Is the MT29F128G08AEEBBH6-12:B TR RoHS compliant?

Yes, the MT29F128G08AEEBBH6-12:B TR is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it meets environmental standards.