MT29F256G08AMCBBH7-6IT:B

Product Overview

Category

MT29F256G08AMCBBH7-6IT:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F256G08AMCBBH7-6IT:B offers a storage capacity of 256 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick data transfer, ensuring efficient performance.
• Reliable and durable: This product is designed to withstand frequent read and write operations, making it highly reliable and durable.
• Low power consumption: The MT29F256G08AMCBBH7-6IT:B is energy-efficient, consuming minimal power during operation.

Package

The MT29F256G08AMCBBH7-6IT:B is available in a compact package, suitable for integration into various electronic devices. It adheres to industry-standard packaging guidelines.

Essence

The essence of this product lies in its ability to provide high-capacity, reliable, and fast data storage for electronic devices, enhancing their overall performance and functionality.

Packaging/Quantity

The MT29F256G08AMCBBH7-6IT:B is typically packaged individually or in bulk, depending on customer requirements. The quantity per package may vary, but commonly ranges from 1 to 100 units.

Specifications

• Storage Capacity: 256 GB
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The MT29F256G08AMCBBH7-6IT:B has a pin configuration as follows:

1. VCC
2. GND
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. A16
20. A17
21. A18
22. A19
23. A20
24. A21
25. A22
26. A23
27. A24
28. A25
29. RE#
30. WE#
31. CLE
32. ALE
33. WP#
34. R/B#
35. CE#

Functional Features

• Page Read/Program/Erase Operations: The MT29F256G08AMCBBH7-6IT:B supports efficient read, program, and erase operations at the page level, allowing for flexible data management.
• Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: The product employs wear-leveling techniques to distribute write operations evenly across memory blocks, extending its lifespan.
• Bad Block Management: It includes mechanisms to identify and manage bad blocks, ensuring optimal performance and preventing data loss.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate enhances overall device performance.
• Reliable and durable design ensures long-term usage.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Relatively higher cost compared to lower-capacity storage options.
• Limited compatibility with certain older devices due to interface requirements.

Working Principles

The MT29F256G08AMCBBH7-6IT:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells can be electrically programmed and erased, allowing for data storage and modification. The device operates by sending commands and addresses through the provided pins, enabling read, program, and erase operations at the page level.

Detailed Application Field Plans

The MT29F256G08AMCBBH7-6IT:B finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F128G08CBACAWP:A - 128 GB NAND Flash Memory
2. MT29F512G08CMCABWP