MT29F2G08ABAEAWP-ATX:E

Product Overview

Category

MT29F2G08ABAEAWP-ATX:E belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G08ABAEAWP-ATX:E offers a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Low power consumption: It consumes minimal power during operation, making it suitable for portable devices.
• Compact package: The MT29F2G08ABAEAWP-ATX:E is available in a small form factor, enabling easy integration into various devices.

Package and Quantity

The MT29F2G08ABAEAWP-ATX:E is typically packaged in a surface-mount package (SMT) and is supplied in reels or trays. The exact quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 2 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration of MT29F2G08ABAEAWP-ATX:E is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data, improving efficiency.
• Random Access: Provides quick access to specific data within the memory.
• Wear-Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable and durable NAND flash memory technology ensures data integrity.

Disadvantages

• Limited erase/write cycles compared to other non-volatile memory technologies.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F2G08ABAEAWP-ATX:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The stored data can be accessed and modified through specific commands and addresses.

When data is written, the memory controller sends a program command along with the desired data and address. The data is then programmed into the selected memory cells. Similarly, during read operations, the controller sends a read command and address, and the stored data is retrieved from the specified cells.

Application Field Plans

MT29F2G08ABAEAWP-ATX:E finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Several alternative models with similar specifications and functionality to MT29F2G08ABAEAWP-ATX:E are available in the market. Some notable alternatives include: - Samsung K9K8G08U0B - Toshiba TH58NVG6D2FLA89 - Micron MT29F2G08ABBEAH4

These alternative models can be considered based on specific requirements and compatibility with the target application.

In conclusion, MT29F2G08ABAEAWP-ATX:E is a NAND flash memory device that offers high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices for data storage purposes.