MT29F2T08CUCBBK9-37:B

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics: Non-volatile, high capacity, fast read/write speed
• Package: Integrated circuit (IC)
• Essence: Flash memory
• Packaging/Quantity: Bulk packaging, typically sold in reels or trays

Specifications

• Model: MT29F2T08CUCBBK9-37:B
• Capacity: 2 Terabits (256 Gigabytes)
• Interface: Universal Flash Storage (UFS) 2.1
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Read up to 850MB/s, Write up to 260MB/s

Detailed Pin Configuration

The MT29F2T08CUCBBK9-37:B has a total of 153 pins. Here is a brief overview of the pin configuration:

• VCC: Power supply voltage
• GND: Ground
• CE#: Chip enable
• RE#: Read enable
• WE#: Write enable
• R/B#: Ready/busy status
• DQ[0:15]: Data input/output lines
• CLE: Command latch enable
• ALE: Address latch enable
• WP#: Write protect
• RP#: Reset/power down
• NC: No connection

For a complete and detailed pin configuration diagram, please refer to the datasheet provided by the manufacturer.

Functional Features

• High-speed data transfer: The UFS interface allows for fast read and write speeds, enabling quick access to stored data.
• Non-volatile storage: The flash memory retains data even when power is disconnected, ensuring data integrity.
• High capacity: With a capacity of 2 Terabits, the chip provides ample storage space for various applications.
• Reliable performance: The MT29F2T08CUCBBK9-37:B is designed to deliver consistent and reliable performance in demanding environments.

Advantages and Disadvantages

Advantages: - Fast read/write speeds enhance overall system performance. - Non-volatile memory ensures data persistence. - High capacity allows for extensive data storage. - Reliable performance in challenging conditions.

Disadvantages: - Higher cost compared to traditional storage solutions. - Limited compatibility with older devices that do not support UFS interface.

Working Principles

The MT29F2T08CUCBBK9-37:B utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge trapping to store binary information. When data is written, charges are trapped in the floating gate, representing either a "0" or a "1." During read operations, the charges are sensed to determine the stored value.

Detailed Application Field Plans

The MT29F2T08CUCBBK9-37:B is widely used in various electronic devices that require high-capacity and fast data storage. Some common application fields include: - Smartphones and tablets - Solid-state drives (SSDs) - Digital cameras - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• MT29F2G08ABAEAWP-IT:E
• MT29F2G08ABBEAH4-IT:E
• MT29F2G08ABBEAH4-ITE:E
• MT29F2G08ABBEAH4-ITE:J
• MT29F2G08ABBEAH4-ITE:K

These alternative models offer similar specifications and functionality to the MT29F2T08CUCBBK9-37:B, providing options for different application requirements.

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