MT29F4G08ABBDAH4-AITX:D

Product Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity (4GB)
  • NAND Flash technology
• Package: BGA (Ball Grid Array)
• Essence: Reliable and high-performance memory solution
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F4G08ABBDAH4-AITX:D
• Memory Type: NAND Flash
• Density: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F4G08ABBDAH4-AITX:D has a total of 48 pins arranged in a specific configuration. The pinout is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. VSS
36. DQ0
37. DQ1
38. DQ2
39. DQ3
40. DQ4
41. DQ5
42. DQ6
43. DQ7
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• High-speed data transfer
• Error correction capability
• Block erase and program operations
• Wear-leveling algorithm for extended lifespan
• Power-saving features
• Hardware write protection

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Reliable and durable - Low power consumption - Suitable for various applications

Disadvantages: - Limited endurance compared to other memory types - Higher cost per gigabyte compared to traditional hard drives

Working Principles

The MT29F4G08ABBDAH4-AITX:D utilizes NAND Flash technology to store and retrieve data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The memory cells are accessed using an address bus and controlled by various control signals.

When data needs to be written, the memory controller sends the appropriate address and data signals to the NAND Flash device. The device then performs the necessary operations to program the data into the selected memory cells. Similarly, when data needs to be read, the device retrieves the requested data from the memory cells and sends it back to the memory controller.

Detailed Application Field Plans

The MT29F4G08ABBDAH4-AITX:D is widely used in various electronic devices and systems that require reliable and high-capacity data storage. Some of the common application fields include:

1. Solid-State Drives (SSDs)
2. USB flash drives
3. Embedded systems
4. Industrial automation
5. Automotive electronics
6. Consumer electronics

Detailed and Complete Alternative Models

1. MT29F4G08ABADAH4-ITX:D
2. MT29F4G08ABBDAH4-ITX:D
3. MT29F4G08ABADAH4-IT:D
4. MT29F4G08ABBDAH4-IT:D
5. MT29F4G08ABADAH4-ATX:D

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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