MT29F512G08CMCBBH7-6R:B

Product Overview

Category

MT29F512G08CMCBBH7-6R:B belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F512G08CMCBBH7-6R:B offers a storage capacity of 512 gigabytes (GB), allowing users to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, making it suitable for battery-powered devices.
• Durable design: The MT29F512G08CMCBBH7-6R:B is built to withstand harsh environmental conditions, ensuring data integrity even in challenging situations.

Package and Quantity

The MT29F512G08CMCBBH7-6R:B is available in a compact package that measures 14mm x 18mm. It is typically sold in bulk quantities, with each package containing one unit of the NAND flash memory.

Specifications

• Storage Capacity: 512 GB
• Interface: Universal Flash Storage (UFS)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 600 megabytes per second (MB/s)
• Endurance: Up to 1,000,000 program/erase cycles

Pin Configuration

The MT29F512G08CMCBBH7-6R:B follows a standard pin configuration for NAND flash memory. It consists of the following pins:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data input/output
8. R/B: Ready/Busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Error Correction Code (ECC): The MT29F512G08CMCBBH7-6R:B incorporates ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear-Leveling: This feature evenly distributes write operations across memory blocks, extending the lifespan of the NAND flash memory.
• Bad Block Management: The product includes a mechanism to identify and manage defective memory blocks, preventing data loss.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance with low power consumption.
• Durable design ensures data integrity in challenging environments.

Disadvantages

• Relatively higher cost compared to lower-capacity NAND flash memory options.
• Limited compatibility with older devices that do not support UFS interface.

Working Principles

The MT29F512G08CMCBBH7-6R:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the controller sends commands and addresses to the NAND flash memory, enabling the transfer of data between the device and the memory.

Application Field Plans

The MT29F512G08CMCBBH7-6R:B is widely used in various electronic devices that require high-capacity data storage. Some of the key application fields include:

1. Smartphones and tablets: The NAND flash memory provides ample storage for apps, photos, videos, and other multimedia content.
2. Solid-State Drives (SSDs): These drives utilize NAND flash memory as a non-volatile storage medium, offering faster boot times and improved system performance.
3. Digital cameras: The high capacity of the MT29F512G08CMCBBH7-6R:B allows photographers to capture and store a large number of high-resolution images.
4. Industrial equipment: This NAND flash memory is suitable for use in rugged industrial environments where reliable and durable data storage is essential.

Alternative Models

• MT29F256G08CMCBBH7-6R:B: A lower-capacity variant with 256 GB storage.
• MT29F1T08EMCBBH7-6R:B: A higher-capacity variant with 1 terabyte (TB) storage.
• MT29F512G08CMCBBH7-6R:C: An alternative model with minor differences in